Position Discrimination of a 2.4 GHz IEEE 802.15.4 RF Mobile Source Inside-Outside a Vehicle

Marsic, Vlad; Kampert, Erik; Higgins, Matthew D.

doi:10.1109/smartnets50376.2021.9555414

Cited by 2 publications

(3 citation statements)

References 17 publications

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“…Fig. 3 shows the schematic for the microcontroller's data acquisition board, derived from a wireless design presented in [47].…”

Section: A Hall Sensor Calibration and Preparationsmentioning

confidence: 99%

“…Since the data is delivered in the form of ADC voltage samples that take into account the sensor's position towards B, a transformation function is required. As it was established in [46], a linear conversion function can be derived from a polynomial line equation rather than from its parametric form which is better suited for vector analysis and modeling like encountered in ray tracing simulations [48] [49]. A first-order polyfit function can be used in MATLAB [50] since the function format is now known.…”

Section: A Hall Sensor Calibration and Preparationsmentioning

confidence: 99%

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GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

Marsic,

Faramehr,

Fleming

et al. 2024

IEEE Access

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Wide bandgap Gallium Nitride (GaN) technology promises to deliver the next generation of power transistors capable of high energy density and compact design integration however, without active monitoring high failing rates are recorded due to its instability to design parameter variations. Moreover, the electromagnetic (EM) radiofrequency (RF) emissions due to GaN power switching require extra design resources. Considering the extensive research area dedicated to galvanic isolated magnetic sensors for GaN wafer monolithic integration with usage in power monitoring, this study investigates the conditions that a Hall sensor is required to meet when operating in close proximity of a GaN transistor. Through considerable experimental testing, it was determined that the sensor requires a magnetic field starting from ±1 mT when interfaced with a microcontroller. Additionally, since the GaN transistor's EM RF switching noise was one of the most monitored parameters during the experiments, it was discovered that it is proportional to the transistor's current transfer area whereas its magnitude is due to electrical current required by the load. As a result of these findings, the EM radiated switching noise may apply to all electrical switches and provide a significant advantage when designing for EM compatibility (EMC).

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“…Fig. 3 shows the schematic for the microcontroller's data acquisition board, derived from a wireless design presented in [47].…”

Section: A Hall Sensor Calibration and Preparationsmentioning

confidence: 99%

Section: A Hall Sensor Calibration and Preparationsmentioning

confidence: 99%

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

Marsic,

Faramehr,

Fleming

et al. 2024

IEEE Access

Self Cite

View full text Add to dashboard Cite

show abstract

“…As an example in Fig. 6 A , the simulated positional response to the ray source from a receiver inside a rectangular reflective box with one missing wall has been created and tested in the real-world by completely encasing an RF sensor based on the IEEE 802.15.4 standard inside a cylindrical metal enclosure with one opening [29]. Fig.…”

Section: Potential Real-world Implementations Of the Modelled Ray Sou...mentioning

confidence: 99%

Ray Tracing 3D Source Modelling for Optical Reflectance Sensing with Wireless Ranging Application

Marsic

Kampert

Higgins

2021

2021 IEEE International Symposium on Robotic and Sensors Environments (ROSE)

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Position Discrimination of a 2.4 GHz IEEE 802.15.4 RF Mobile Source Inside-Outside a Vehicle

Abstract: How to cite:Please refer to published version for the most recent bibliographic citation information. If a published version is known of, the repository item page linked to above, will contain details on accessing it.

Cited by 2 publications

References 17 publications

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

Ray Tracing 3D Source Modelling for Optical Reflectance Sensing with Wireless Ranging Application

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