Silicon
phthalocyanines (SiPcs) have shown great potential as n-type
or ambipolar organic semiconductors in organic thin-film transistors
(OTFTs) and organic photovoltaics. Although properly designed SiPcs
rival current state-of-the-art n-type organic semiconducting materials,
relatively few structure–property relationships have been established
to determine the impact of axial substituents on OTFT performance,
hindering the intelligent design of the next generation of SiPcs.
To address this omission, we have developed structure–property
relationships for vapor-deposited SiPcs with phenoxy axial substituents.
In addition to thorough electrical characterization of bottom-gate
top-contact OTFTs, we extensively investigated SiPc thin films using
X-ray diffraction, atomic force microscopy (AFM), grazing-incidence
wide-angle X-ray scattering (GIWAXS), and density functional theory
(DFT) modeling. OTFT performance, including relative electron mobility
(μe) of materials, was in general agreement with
values obtained through DFT modeling including reorganization energy.
Another significant trend observed from device performance was that
increasing the electron-withdrawing character of the axial pendant
groups led to a reduction in threshold voltage (V
T) from 47.9 to 21.1 V. This was corroborated by DFT modeling,
which predicted that V
T decreases with
the square of the dipole induced at the interface between the SiPc
pendant and substrate. Discrepancies between modeling predictions
and experimental results can be explained through analysis of thin-film
morphology and orientation by AFM and GIWAXS. Our results demonstrate
that a combination of DFT modeling to select prospective candidate
materials, combined with appropriate processing conditions to deposit
molecules with a favorable thin-film morphology in an “edge-on”
orientation relative to the substrate, yields high-performance n-type
SiPc-based OTFTs.