Zinc oxide thin films are fabricated by controlled oxidation of sputtered zinc metal films on ah otplatei na ir at temperatures between 250 and 450 8C. The nanocrystalline films possess high relative densities and showp referential growth in (100) orientation. Integration in thin-filmt ransistors reveals moderate chargec arrierm obilities as high as 0.2 cm 2 V À1 s À1 .T he semiconducting properties depend on the calcination temperature, whereby the best performance is achieved at 450 8C. The defect structure of the thin ZnO film can be trackedb yD oppler-broadening positron annihilation spectroscopy as well as positronlifetimes tudies. Comparablyl ong positron lifetimes suggest interaction of zinc vacancies (V Zn)w ith one or more oxygen vacancies (V O)i n largers tructural entities. Such V O-V Zn defectc lusters act as shallowa cceptors, and thus, reduce the overall electronc onductivity of the film. The concentration of these defectc lusters decreasesa th igherc alcination temperatures as indicated by changes in the Sa nd Wp arameters. Such zinc oxide films obtainedb yc onversiono fm etallic zinc can also be used as seed layers for solution depositiono fz inc oxide nanowires employingamild microwave-assisted process. The functionality of the obtained nanowirea rrays is tested in aU Vs ensor device. The best resultsw ith respect to sensors ensitivity are achieved with thinner seed layers for devicec onstruction.