Possibilities of Characterizing the Crystal Parameters of CdxHg1 – xTe Structures on GaAs Substrates by the Method of Generation of the Probe-Radiation Second Harmonic in Reflection Geometry

Stupak, M. F.; Михайлов, Н. Н.; Дворецкий, С. А.; Yakushev, M. V.; Ikusov, D. G.; Makarov, Sergey N.; Elesin, A. G.; Verkhoglyad, A. G.

doi:10.1134/s1063783420020201

Cited by 8 publications

(20 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The structural crystal perfection of the substrate and the MBE MCT HES layers was measured at the room temperature by the SHG method ex situ on the highsensitive laboratory test bench for the non-linear optical diagnostics, which operation is described in detail [27,28]. The average power for SHG was changed within the range 0.01 to 0.07 W by means of the Nd : YAG-laser.…”

Section: Samples and Experimental Proceduresmentioning

confidence: 99%

“…The SH polarization components dependence intensity on the mutual orientation of the polarization of excitation radiation in reference to the crystallophysical axes was measured, whereby the experiment recorded the SH polarization parallel to the azimuthally changing linear polarization of the excitation radiation (hereinafter referred to as the azimutal dependence). The experimental and numerical model data for the ideal crystal in a given local area were analyzed to obtain the quantitative information about the crystal state of the subsurface layer, its orientation and the growing layers orientation rotation within the plane and the growth direction, as well as a number of other characteristics with an error no worse one degree [26][27][28][29][34][35][36][37][38][39][40]. The crystal state of the MCT layers was measured by azimuthal SH signal intensity dependence measurement with layerby layer etching.…”

Section: Samples and Experimental Proceduresmentioning

confidence: 99%

“…The SH calculation using the non-linear susceptibility tensor χ x y z (ω) in the crystals of sphalerite or zinc blende (international classificationclass 43m) is described in detail in [30,31]. When comparing the calculation and experimental results of the azimuthal SH signal dependences in a specific geometry and for specific crystal slices, numerical modelling is applied [25][26][27][28][29][32][33][34].…”

Section: Analysis Of the Behavior And Recording Of The Azimuthal Depe...mentioning

confidence: 99%

“…Taking into account a unique determinability of the absolute orientation for non-centrosymmetric crystals in relation to the shear plane by the second harmonic generation of the probing laser radiation, we have examined the rotation of the orientation of the (013)GaAs substrates and the (013)CdTe layers when growing on the (013)ZnTe/GaAs substrates within the growth plane by the second harmonic generation (SHG) [26][27][28][29]. It was shown that for the CdTe/ZnTe/GaAs(013) structures the rotation within the growth plane was from 3 to 8 angl.…”

Section: Introductionmentioning

confidence: 99%

“…The second harmonic generation (SHG) is a faster and more convenient method in comparison with the electron and X-ray diffraction methods in the studies for obtaining the express non-destructive information, which supplements the application of traditional electron, X-ray and other diffraction methods [26][27][28][29][34][35][36][37][38][39][40].…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Study of the Crystalline State of MBE (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructure Layers by the Second Harmonic Generation Method

et al. 2022

View full text Add to dashboard Cite

The crystal perfection of HgCdTe layers of heterostructures grown on (013)GaAs substrates with ZnTe and CdTe buffer layers and orientation rotation in the plane(angle φ) and perpendicular to the growth direction (angle theta) were studied by the method of second harmonic generation. A change in the angle φ for CdTe layers was observed depending on the GaAs substrate orientation and its non-monotonic change throughout thickness in the MCT layer of constant composition and graded widegap layers at its boundaries. An increase in the angle theta was observed when growing the upper graded widegap MCT layer. The absolute value of the angle theta can be used for a qualitative assessment of the crystalline perfection of the HgCdTe layers. Keywords: crystals of the sphalerite class, second harmonic, azimuthal angular dependencies, crystal perfection, CdxHg1-xTe heterostructures.

show abstract

Section: Samples and Experimental Proceduresmentioning

confidence: 99%

Section: Samples and Experimental Proceduresmentioning

confidence: 99%

Section: Analysis Of the Behavior And Recording Of The Azimuthal Depe...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Study of the Crystalline State of MBE (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructure Layers by the Second Harmonic Generation Method

et al. 2022

View full text Add to dashboard Cite

show abstract

Local measurement of weak stresses on the surface of HgCdTe/CdTe/ZnTe/GaAs structures using the null method

Stupak,

Dvoretsky,

Mikhailov

et al. 2023

Journal of Applied Physics

View full text Add to dashboard Cite

A study of residual mechanical stresses in the surface layer of the HgCdTe/CdTe/ZnTe/GaAs structure based on the registration of the second harmonic signal characteristics of reflected IR laser radiation from the surface of the studied sample passed through a nonlinear crystal was carried out. It is shown that such a sensitive method makes it possible to obtain information about the anisotropy of the polarization of the reflected radiation, caused by the residual deformation. Observations of the fine structure of the angular sweep of the second harmonic signal suggest a complex structure of residual stresses related to the presence of misoriented areas. The results were compared with data obtained from measurements of the azimuthal dependence of the self-reflected second harmonic signal from the sample surface.

show abstract

THz polarization-dependent response of antenna-coupled HgCdTe photoconductors under an external constant electric field

Сизов¹,

Tsybrii²,

Danilov³

et al. 2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The photoresponse of antenna-coupled Hg 1-x Cd x Te (x ≈ 0.201) narrow-gap epitaxially grown photoconductors with normal band ordering having large spin-orbit coupling and being irradiated by the normal to the photoconductor surface terahertz (THz) radiation (linearly or circularly polarized), is investigated at T = 80 and 300 K. The oscillations of polarized photoresponse in biased and unbised structures were revealed. In experiments, Hg 1-x Cd x Te layers (point group 43m (T d )) grown on (013) GaAs substrates were used. In biased structures, to the ordinary charge current and Rashba spin splitting current in zero electric field, an additional polarized current, which grows with the external electric field strength, arises. Presumably, the oscillating photoresponses under polarized THz radiation in these unbiased and biased structures are connected with the circular and linear photogalvanic effects without and with an external electric field. The observed features of the polarized dependent photoresponse can be important for spintronics applications at elevated temperatures.

show abstract

Possibilities of Characterizing the Crystal Parameters of CdxHg1 – xTe Structures on GaAs Substrates by the Method of Generation of the Probe-Radiation Second Harmonic in Reflection Geometry

Cited by 8 publications

References 10 publications

Study of the Crystalline State of MBE (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructure Layers by the Second Harmonic Generation Method

Study of the Crystalline State of MBE (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructure Layers by the Second Harmonic Generation Method

Local measurement of weak stresses on the surface of HgCdTe/CdTe/ZnTe/GaAs structures using the null method

THz polarization-dependent response of antenna-coupled HgCdTe photoconductors under an external constant electric field

Contact Info

Product

Resources

About