Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

Structural Features of the Epitaxial Layer of the (GaAs)₁₋<i>_y</i>₋<i>_z</i>(Ge₂)<i>_y</i>(ZnSe)<i>_z</i> Solid Solution Grown from a Bismuth Solution Melt

“…Numerous works devoted to studying semiconductor solid solution (SS) properties have shown that it is possible to control their structural, electrical, optical, and luminescent properties. Today, this has been achieved in the case of numerous binary SS systems, such as Si 1−x Ge x [2], Si 1−x Sn x [3,4], and Ge 1−x Sn x [5], in three-element SS systems, such as (ZrO 2 ) 1−x (Sc 2 O 3 ) x [6], (GaSb) 1−x (Si 2 ) x [7], (Si 2 ) 1−x (GaP) x [8], Zn x Cd 1−x Se [9,10], ZnS x Se 1−x [11], Pb 1−x Sn x Te [12], InGaN [13], AlGaN [14], and InGaAs [15], in four-element SS systems, such as (GaAs) 1−x (ZnSe) x [16] and AgGaGeS 4 -AgGaGe 3 Se 8 [17], and in five-element SS systems, such as (Sn 2 ) 1−x−y (GaAs) x (ZnSe) y [18] and (ZnSe) 1−x−y (Si 2 ) x (GaP) y [19].…”