Possible charge-density-wave signatures in the anomalous resistivity of Li-intercalated multilayer MoS2

Abstract

We fabricate ion-gated field-effect transistors (iFET) on mechanically exfoliated multilayer MoS2. We encapsulate the flake by Al2O3, leaving the device channel exposed at the edges only. A stable Li + intercalation in the MoS2 lattice is induced by gating the samples with a Li-based polymeric electrolyte above ∼ 330 K and the doping state is fixed by quenching the device to ∼ 300 K. This intercalation process induces the emergence of anomalies in the temperature dependence of the sheet resistance and its first derivative, which are typically associated with structural/electronic/magnetic phase transitions. We suggest that these anomalies in the resistivity of MoS2 can be naturally interpreted as the signature of a transition to a charge-density-wave phase induced by lithiation, in accordance with recent theoretical calculations.

Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films

“…First, in the H-(110) surface at n 2D 1 • 10 13 h + cm −2 , τ actually increases with increasing n 2D . This indicates that, at very low doping, the improved screening due to the increase in carrier density is more important than both the increase in electron-phonon scattering [25,26,42,43] and the gate-induced increase in Coulomb scattering centers [25,36,38,61,62,[71][72][73][74][75][76][77][78]. At larger doping, τ again decreases with increasing n 2D in both the H-(110) and H-(111) surfaces.…”

“…As expected, the H-( 111) and H-(110) surface shows very similar values of µ and similar n 2D -dependencies: As already reported in the case of ion-gated H-( 111) and H-(100) surfaces at T > 200 K [25,26], µ ∼ 100 cm 2 V −1 s −1 near V G = 0 and then rapidly decreases at the increase of n 2D . This behavior has been explained as due to a combination of the intrinsic doping dependence of acousticphonon scattering [25,26,42,43] and the gate-induced disorder caused by the ions in the EDL acting as charged scattering centers [25,36,38,61,62,[71][72][73][75][76][77][78]. The introduction of B dopants strongly suppresses µ in both diamond surfaces, but with a starkly different effectiveness.…”

Ionic gating in the study of superconductivity

“…Cui等人 [103] 则用核磁共振(NMR)实验证实了H + 注入在系列铁基超 导体(11和122体系)的调控中发挥了重要的作用. 巧合 的是, Lei等人 [104] 和Ying等人 [105] [108] ; Rafique等人 [86] [110] .…”

Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels

“…The scattering rate due to charged impurities, instead, is strongly doping-dependent at any T , since it is strongly suppressed by the improved electrostatic screening upon increasing the carrier density 55 . In ion-gated devices, however, this scattering rate can also increase upon increasing doping due to the extrinsic scattering centers introduced by the ions in the EDL, leading to a competition 6,11,18,20,24,[41][42][43][57][58][59][60] . Furthermore, in MoS 2 the charged-impurity scattering rate can in general lead to a T -dependence of the scattering rate very similar to that due to acoustic phonon scattering 55 .…”