2015
DOI: 10.1016/j.microrel.2015.02.019
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Possible failure modes in Press-Pack IGBTs

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Cited by 57 publications
(18 citation statements)
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“…A conclusion is made in [112] that the internal pressure increases and decreases during power cycling and temperature cycling, which could lead to possible fatigue for those press-pack packaging. Further, [117] explained that two possible failure mechanisms of the press-pack structure are micro-electrical discharge and damage of the gate oxide. Besides, vibration can also affect the stability of clamping pressure.…”
Section: Press-pack Packagingmentioning
confidence: 99%
“…A conclusion is made in [112] that the internal pressure increases and decreases during power cycling and temperature cycling, which could lead to possible fatigue for those press-pack packaging. Further, [117] explained that two possible failure mechanisms of the press-pack structure are micro-electrical discharge and damage of the gate oxide. Besides, vibration can also affect the stability of clamping pressure.…”
Section: Press-pack Packagingmentioning
confidence: 99%
“…The VSC‐HVDC used press‐pack IGBT device is composed of many independent sub‐modules inside as reported in [6]. From top to bottom every sub‐module include collector copper plate, collector molybdenum layer ( C m layer), IGBT chip, emitter molybdenum layer ( E m layer), silver gasket, and grid probe, on the IGBT chip both sides have a very thin layer of aluminium.…”
Section: Physical Field Modelling Of Press‐pack Igbtmentioning
confidence: 99%
“…Studies in [41] showed that press-pack IGBTs have improved lifetime performance compared to the flat-pack IGBTs. However, [42] found early failures that could be attributed to damaged gateoxide and micro-eroding. The press-pack also addresses the solder fatigue failure mechanism.…”
Section: A Component Reliability -Power Module Levelmentioning
confidence: 99%