“…2(f), was a result of the external water-cooling system of the reactive ion etcher: this system was used to lower the temperature of the sample stage to approximately 10 °C, well below room temperature; consequently when the chamber cover was opened post-etching, the resulting significant temperature difference caused a rapid condensation of water molecules in the chamber, leading to their attachment to the sample surface and subsequent generation of AlF 3 hydrates. 26 Fig. 2 inset displays a spectrogram showing the XPS characterization of corresponding elements; the fence structure substrate was here observed to contain different proportions of Al, F, C and O elements.…”