Post-annealing effects on pulsed laser deposition-grown GaN thin films

Cheng, Yu-Wen; Wu, Hsiao-Mei; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching‐Fuh

doi:10.1016/j.tsf.2015.01.024

Cited by 14 publications

(7 citation statements)

References 35 publications

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“…Texture in MoS 2 films derived from epitaxial MoO 2 precursor films is caused by a large number of defects such as misfit dislocations present in the as‐grown epitaxial precursor MoO 2 film . Direct thermal annealing process has normally been used to reduce the defects and improve the crystalline quality of epitaxial precursor films . However, this approach usually produces noncontinuous films or films with rough surfaces due to recrystallization, which we also observe upon direct‐annealing our epitaxial MoO 2 films in this report.…”

Section: Resultsmentioning

confidence: 53%

Enhanced Quality of Wafer‐Scale MoS₂ Films by a Capping Layer Annealing Process

Zhang

Hota

et al. 2020

Adv Funct Materials

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Wafer‐scale, single‐crystalline 2D semiconductors without grain boundaries and defects are needed for developing reliable next‐generation integrated 2D electronics. Unfortunately, few literature reports exist on the growth of 2D semiconductors with single‐crystalline structure at the wafer scale. It is shown that direct sulfurization of as‐deposited epitaxial MoO2 films (especially, with thicknesses more than ≈5 nm) produces textured MoS2 films. This texture is inherited from the high density of defects present in the as‐prepared epitaxial MoO2 film. In order to eliminate the texture of the converted MoS2 films, a new capping layer annealing process (CLAP) is introduced to improve the crystalline quality of as‐deposited MoO2 films and minimize its defects. It is demonstrated that sulfurization of the CLAP‐treated MoO2 films leads to the formation of single‐crystalline MoS2 films, instead of textured films. It is shown that the single‐crystalline MoS2 films exhibit field‐effect mobility of 6.3 cm2 V−1 s−1, which is 15 times higher than that of textured MoS2. These results can be attributed to the smaller concentration of defects in the single‐crystalline films.

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Section: Resultsmentioning

confidence: 53%

Enhanced Quality of Wafer‐Scale MoS₂ Films by a Capping Layer Annealing Process

Zhang

Hota

et al. 2020

Adv Funct Materials

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“…The peak positions of each sample were 574.0, 574.6, 574.6, and 576.3 cm −1 , respectively. From the Raman scan results, the residual stress can be calculated as follows: 13)…”

Section: Resultsmentioning

confidence: 99%

Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

Choi

Lee

Kwak

et al. 2019

Jpn. J. Appl. Phys.

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We investigated the growth behavior of GaN grown on AlN along with V/III ratio and pressure variation, and found out the lateral growth regime for the fully coalesced channel layer of the AlN-based double-hetero structure high electron mobility transistor (HEMT). When the V/III ratio increases and pressure decreases, compressive stress in the GaN channel increases, and pit formation occurs to release the stress. The AlN-based HEMT structure was grown and the device was fabricated with an optimized channel layer. The two-dimensional electron gas mobility, sheet density, and sheet resistance were 1480 cm2 V−1 s−1, 1.32 × 1013 cm−2, and 319 Ω/sq., respectively, at room temperature. The device was characterized; direct current output result showed that the maximum current was ∼620 mA mm−1, on-resistance was 6.4 Ω mm, transconductance was ∼140 mS mm−1, and current on/off ratio was ∼104, respectively.

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“…GaN ve InN ince filmler amorf alttaşlar üzerine büyütüldüklerinde polikristal yapıda kristalleştikleri gözlemlenmiştir (Chen et al 2014, Fujiwara et al 2016, Kazazis et al 2016). Yüksek dış basınç altında ince film biriktirme gerçekleştirildiğinde rocksalt yapıda kristallenme olduğu tespit edilmiştir (Cheng et al 2015, Oliva et al 2014. In katkılama ile GaN temelli ince filmler güneş pilleri için toksik etkiye sahip olmayan doğrudan geçişli ayarlanabilir geniş optik bant aralığına sahip olması, yüksek elektron mobiliteli transistör (HEMT) cihazlar için uygun ısıl iletkenliğe sahip olması, çok yüksek sıcaklıklara dayanıklılığı ticari ve askeri uygulamalar için umut vaat eden bileşikler olarak ön plana çıkmaktadır (Gundogdu et al 2014, Mori et al 2017, Schaake et al 2013.…”

Section: Introductionunclassified

Alternatif InGaN İnce Film Üretim Yöntemi: Termiyonik Vakum Ark

Özen¹

2019

Afyon Kocatepe University Journal of Sciences and Engineering

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Bu çalışmanın kapsamında, amorf cam alttaşlar üzerine indiyum galyum nitrat ince filmler hızlı ve düşük maliyetli olan termiyonik vakum ark yöntemi ile doğrudan üretilmiştir. İnce filmler tek bir deneyde alttaş ısıtma uygulamadan 2 farklı anot-alttaş arası mesafede biriktirilmiştir. Üretilen InGaN ince filmlerin yapısal ve yüzeysel özellikleri uygun analiz yöntemleri ile belirlenmiştir. X-ışını kırınım (XRD) cihazı ile XRD desenleri belirlenerek kristal boyutları Scherrer yöntemi tarafından hesaplanmıştır. Hekzagonal wurtzite kristal yapılı %50 In katkılı GaN filmlerin üretildiği belirlenmiştir. InGaN ince filmlerin yüzeysel özellikleri ise atomik kuvvet mikroskobu aracılığıyla tespit edilmiştir. Yüzey özellikleri belirlenirken histogram analizleri ve boyut analizleri yapılmıştır. GaN temelli cihazların üretiminde termiyonik vakum ark yönteminin alternatif üretim sistemi olduğu görülmüştür.

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Post-annealing effects on pulsed laser deposition-grown GaN thin films

Cited by 14 publications

References 35 publications

Enhanced Quality of Wafer‐Scale MoS₂ Films by a Capping Layer Annealing Process

Enhanced Quality of Wafer‐Scale MoS₂ Films by a Capping Layer Annealing Process

Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

Alternatif InGaN İnce Film Üretim Yöntemi: Termiyonik Vakum Ark

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Post-annealing effects on pulsed laser deposition-grown GaN thin films

Cited by 14 publications

References 35 publications

Enhanced Quality of Wafer‐Scale MoS2 Films by a Capping Layer Annealing Process

Enhanced Quality of Wafer‐Scale MoS2 Films by a Capping Layer Annealing Process

Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

Alternatif InGaN İnce Film Üretim Yöntemi: Termiyonik Vakum Ark

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Enhanced Quality of Wafer‐Scale MoS₂ Films by a Capping Layer Annealing Process

Enhanced Quality of Wafer‐Scale MoS₂ Films by a Capping Layer Annealing Process