Post-annealing in oxygen ambient for (Ba,Sr)TiO3 thin films prepared by pulsed laser deposition

Preparation, microstructure and dielectric properties of Ba0.5Sr0.5TiO3 thin films grown on Pt/Ti/SiO2/Si substrates by pulsed laser deposition

“…However, according to the observations in addition to the estimation from an XRD peak, the grain size of the films increases with increasing substrate temperature, as expected, because of the sintering, wherein small grains coalesce to form larger grains. Although the surface roughness is increased by elevating the substrate temperature, the grain growth and the improvement of crystallinity in BST films can assist the increase of dielectric constant [15]. This will be further confirmed by the dielectric property measurements.…”

“…6. Comparing the results between the post-annealed sample and the as-deposited sample, we can see the dielectric relaxation is greatly improved by the post-annealing due to the fact that the postannealing process in oxygen ambient enhances the dielectric properties by reduction of oxygen vacancy concentration [15,21]. Furthermore, for the same reason, the post-annealed sample possesses much more excellent dielectric tunability, i.e., 40.6% at an electric field intensity of 278 kV/cm (not shown here).…”

Novel Integration of Metal–Insulator–Metal (MIM) Capacitors Comprising Perovskite-type Dielectric and Cu Bottom Electrode on Low-Temperature Packaging Substrates

“…2(b) indicates that the evaporated amorphous BST may crystallize at temperatures higher than 700 • C while TiO 2 of rutile phase also results from oxidation of the underlying Ti. It should be emphasized that, although the integration scheme is demonstrated with evaporated BST, it actually allows BST deposition by any other advanced techniques such as pulsed laser deposition [11] to significantly improve the crystallization and hence electrical performance. In fact, the most significant advantage of this integration scheme is that the capacitive dielectrics can be grown and annealed in a broad process window without concern of Cu oxidation.…”

“…In short, our capacitor based on a low-cost evaporation process demonstrated comparable capacitance density but has a leakage current of three orders higher than H f O 2 -based capacitors fabricated by atomic layer deposition [19]. It is noticed that some advanced techniques, such as pulsed laser or CSD, allows the formation of BST films with accurate stoichiometric control, less oxygen vacancy and better crystallinity, which results in a higher dielectric constant, lower leakage current (∼1 × 10 −7 A/cm 2 at 2 V, [4], [11]) and reduced capacitance dispersion as a function of frequency. The integration scheme as illustrated in Fig.…”