Post-growth annealing of zinc oxide thin films pulsed laser deposited under enhanced oxygen pressure on quartz and silicon substrates

Fabrication and electrical properties of ordered two-dimensional hollow ZnO shells’ arrays

“…However, the rate of change in the intensity of (0 0 2) is the highest, indicating (0 0 2) preference. Unlike previous report on the crystallization of ZnO thin films, which were formed by PLD, the (1 0 0) and (1 0 1) peaks are still present at all temperatures with significant intensities [11]. Thus, even some preference of (0 0 2) is observed, annealing is thought to bring forth development of all crystallographic planes.…”

Atomic Layer Deposition of UV‐Absorbing ZnO Films on SiO2 and TiO2 Nanoparticles Using a Fluidized Bed Reactor

“…Typical heat treatment studies of ZnO coatings on flat surfaces report the preferential rearrangement of crystalline ZnO to the (002) plane, or normal to the growth surface. [22] This cannot readily occur with ZnO coatings in a core-shell configuration due to the high radius of curvature of the substrate. Heat treatment to 600 8C caused a reaction between ZnO and TiO 2 to form Zn 2 TiO 4 , as seen in Figure 7.…”

Annealing effects of co-doping with Al and Sb on structure and optical–electrical properties of the ZnO thin films

“…The ZnO thin films co-doped with Al and Sb have the highest transmittance at 550 • C and the lowest transmittance at 450 • C in the visible region, indicating gaining higher crystallinity and optical quality. Higher transmittance in visible region indicates that the film has less defects and better crystallinity[19].…”