Post-growth thermal annealing of high N-content GaAsN by MOVPE and its effect on strain relaxation

Klangtakai, Pawinee; Sanorpim, Sakuntam; Yoodee, Kajornyod; Ono, W.; Nakajima, Fumio; Katayama, Ryuji; Onabe, Kentaro

doi:10.1016/j.jcrysgro.2006.10.111

Cited by 9 publications

(7 citation statements)

References 14 publications

(25 reference statements)

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“…The increasing N incorporation in the GaAs 0.981 N 0.019 film after gamma-ray irradiation was due to the movement of N atoms at interstitial sites to either As lattice sites or vacancy sites during irradiation because the gamma ray could transfer energy to the interstitial N atoms. In our previous work [10], we also found that like gamma irradiation, the RTA process can induce increasing N incorporation in the lattice sites. As the RTA process heats up the samples and provides the interstitial N atoms with higher thermal energy, the atoms can also move to the As and vacancy sites.…”

Section: Resultsmentioning

confidence: 61%

“…In our previous work, we investigated the structural and optical properties of GaAs 1 À x N x as a function of the alloy composition (N ¼0-5.1 at%) [2,[8][9][10], where the upper limit of 5.1 at% is the highest N content ever reported for high-quality GaAsN films. Increasing the N content in the structure of GaAs 1 À x N x and In y Ga 1 À y As 1 À x N x led to a degradation of these alloys.…”

Section: Introductionmentioning

confidence: 99%

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Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy

Klangtakai

Sanorpim

Wattanawareekul

et al. 2015

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 61%

Section: Introductionmentioning

confidence: 99%

Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy

Klangtakai

Sanorpim

Wattanawareekul

et al. 2015

Journal of Crystal Growth

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“…Note that the overall intensity of the PL increased by approximately one order of magnitude (Fig. 5) and the peak at 2.97 µm is greatly increased while that of the peak near 3.22 µm has been drastically reduced The changes in the PL emission spectrum are most likely due to a re-arrangement of the local site symmetry around the incorporated N and Ga atoms, or the out diffusion of N as a direct result of the post growth anneal [39]. It should also be noted that the higher temperature increase in PL intensity is no longer observed after the annealing, this can also be seen clearly in Fig.5 (solid points).…”

mentioning

confidence: 93%

N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

Mare¹,

Das²,

Das³

et al. 2011

J. Phys. D: Appl. Phys.

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Abstract:Dilute nitride InGaAsN layers with high In content have been grown on InAs substrates by liquid phase epitaxy using GaN as a precursor for N in the growth solution. Photoluminescence (PL) was obtained in the mid-infrared spectral range at temperatures between 4-300 K. Although Ga increases the InAs bandgap, the strong band anti-crossing effect from the N incorporation resulted in an overall bandgap reduction of 11 meV compared with InAs. The temperature-dependent PL exhibited a complicated behavior and showed an anomalous increase in intensity from 190 K to room temperature. This was due to the formation of a complex defect which behaves as a non-radiative recombination centre and prevents radiative band-band recombination at temperatures < 190 K. Above this temperature the PL increases as band-band transitions become allowed. The formation of this defect requires the presence of both Ga and N and becomes de-activated after a high temperature anneal. Raman spectroscopy confirmed the presence of phonon modes associated with In-N and Ga-N bonds confirming the incorporation of N using liquid phase growth.Confidential: not for distribution.

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“…The InGaAsN/GaAs T‐QWR is expected to operate at high temperatures owing to the large conduction‐band offset of ∼450 meV . The InGaAsN/GaAs T‐QWR grown by MOVPE has been previously reported in Ref.…”

Section: Introductionmentioning

confidence: 99%

Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs T-shaped quantum wire

Klangtakai

Sanorpim

Karlsson

et al. 2014

Phys. Status Solidi A

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The selected InGaAsN/GaAs T-shaped quantum wire (T-QWR) fabricated by metal organic vapor phase epitaxy has been investigated by microphotoluminescence (m-PL) and excitation-power-dependent m-PL. The optical characteristics of one-dimensional structure were taken at low-temperature (4 K) and room temperature (RT) to clarify the intersection of two familiar quantum wells (QWs) in the [001] and [110] directions, named QW1 and QW2, respectively. For the excitation-power-dependent measurement, the intensity of the excitation source was used in the range of 0.001I 0 to I 0 . The result shows that all of emissions related to QW1 and QWR peaks have a nonsymmetric line shape as evidenced by the tailing on the lower-energy side. All peaks shift to higherenergy side (blueshift) with the increase of the excitation power intensity. The blueshift and the low-energy tailing of PL peaks are attributed to the alloying effect. However, the emission peak related to QWR region shows a larger blueshift rate than that of QW1 on increasing of the excitation power intensity. This is an anomalous characteristic for the low-dimensional structure, affected by the large fluctuation state in the QWR region. This fluctuation state is combined of both edges of QWs (QW1 and QW2).

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Post-growth thermal annealing of high N-content GaAsN by MOVPE and its effect on strain relaxation

Cited by 9 publications

References 14 publications

Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy

Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy

N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs T-shaped quantum wire

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