2018
DOI: 10.1149/2.0461712jss
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Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2Thin Films on Ge Substrates: Reliability

Abstract: This work investigates the dielectric quality and interface properties of TiN/Hf 1-x Zr x O 2 /Al 2 O 3 /Ge gate stacks with six different Zr content (0%, 25%, 33%, 50%, 75%, and 100%). The dielectrics were subjected to Slot-Plane Antenna Plasma Oxidation (SPAO) after the ALD deposition process prior to metal deposition. The equivalent oxide thickness (EOT), flat-band voltage (V FB ), interface state density (D it ), C-V hysteresis, and leakage current (I-V) behavior were analyzed. It was observed that EOT dec… Show more

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“…Higher-k dielectric materials such as Hf1-xZrxO2 and/or ZrO2 with or without Al2O3 are used for Ge FinFETs and nanowire transistors. With advanced ALD processing Hf1-xZrxO2 with different Hf to Zr compositions has been explored as an alternative of HfO2 since the tetragonal phase which has higher dielectric constant can be stabilized (18). Fig.…”
Section: High-k Dielectrics On Germaniummentioning
confidence: 99%
“…Higher-k dielectric materials such as Hf1-xZrxO2 and/or ZrO2 with or without Al2O3 are used for Ge FinFETs and nanowire transistors. With advanced ALD processing Hf1-xZrxO2 with different Hf to Zr compositions has been explored as an alternative of HfO2 since the tetragonal phase which has higher dielectric constant can be stabilized (18). Fig.…”
Section: High-k Dielectrics On Germaniummentioning
confidence: 99%