Potential energy surface of In and Ga adatoms above the (111)A and (110) surfaces of a GaAs nanopillar

Shapiro, Jenessa R.; Lin, Andrew; Huffaker, Diana L.; Rätsch, Christian

doi:10.1103/physrevb.84.085322

Cited by 17 publications

(17 citation statements)

References 23 publications

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“…In the SAE method, however, it is challenging to grow InGaAs nanowires on silicon with high growth yield, uniformity, and intermediate indium composition to cover the telecom-wavelength range 11 . Also, incorporation of adatoms on nanowire side facets leads to a non-negligible increase of the nanowire diameter 24 . The nanowire epitaxy condition is, therefore, optimized to realize perfectly grown nanowire arrays with both the material composition and nanowire dimension matched to the design.…”

Section: Introductionmentioning

confidence: 99%

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator

et al. 2017

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Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom-wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.

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Section: Introductionmentioning

confidence: 99%

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator

et al. 2017

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“…For the diffusion activation energy on GaAs (111)A surface we used the value as calculated by Ref. [39], E D =1.06 eV. The value of the ratio µζ R D 0 /ρ D = 2×10 2 Torr has been fitted to the temperature series L1, M1, and H1.…”

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confidence: 99%

High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

Bietti

Basset

Tuktamyshev

et al. 2020

Sci Rep

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We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self-assemble with the desired emission wavelength and highly symmetric shape while maintaining a high optical quality. The role of the growth parameters during the droplet arsenization is discussed and modelled.

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“…Pendellösung fringes are not evident in this sample, although it is possible to see them at lower temperatures. Material quality could be the cause of the smeared fringes, although it is not clear if this was caused by strain-induced segregation of gallium or antimony [18], clustering caused by lower gallium adatom migration [19], or something else. However, the substrate and superlattice peaks are readily identifiable in the upper frame.…”

Section: Resultsmentioning

confidence: 99%

Temperature-Dependent X-ray Diffraction Measurements of Infrared Superlattices Grown by MBE

et al. 2016

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Strained-layer superlattices (SLSs) are an active research topic in the molecular beam epitaxy (MBE) and infrared focal plane array communities. These structures undergo a >500 K temperature change between deposition and operation. As a result, the lattice constants of the substrate and superlattice are expected to change by approximately 0.3%, and at approximately the same rate. However, we present the first temperature-dependent X-ray diffraction (XRD) measurements of SLS material on GaSb and show that the superlattice does not contract in the same manner as the substrate. In both InAs/InAs 0.65 Sb 0.35 and In 0.8 Ga 0.2 As/InAs 0.65 Sb 0.35 SLS structures, the apparent out-of-plane strain states of the superlattices switch from tensile at deposition to compressive at operation. These changes have ramifications for material characterization, defect generation, carrier lifetime, and overall device performance of superlattices grown by MBE.

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Potential energy surface of In and Ga adatoms above the (111)A and (110) surfaces of a GaAs nanopillar

Cited by 17 publications

References 23 publications

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator

High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots

Temperature-Dependent X-ray Diffraction Measurements of Infrared Superlattices Grown by MBE

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