2011
DOI: 10.1080/09500839.2010.541396
|View full text |Cite
|
Sign up to set email alerts
|

Potential fluctuations in phase change memory materials

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
2
0

Year Published

2012
2012
2015
2015

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 6 publications
(2 citation statements)
references
References 18 publications
0
2
0
Order By: Relevance
“…17) Although common amorphous materials such as silicon (a-Si), hydrogenated silicon, and germanium have been investigated, [18][19][20] the temperature-dependent electrical properties of a-SiC thin films grown on quartz have not been reported.…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…17) Although common amorphous materials such as silicon (a-Si), hydrogenated silicon, and germanium have been investigated, [18][19][20] the temperature-dependent electrical properties of a-SiC thin films grown on quartz have not been reported.…”
mentioning
confidence: 99%
“…For thermal sensing devices such as temperature sensors, [8][9][10][11] flow sensors, 14) and inertial sensors, 15,16) the temperature dependence of the electrical properties needs to be known, as it provides information about the sensitivity and system energies. 17) Although common amorphous materials such as silicon (a-Si), hydrogenated silicon, and germanium have been investigated, [18][19][20] the temperature-dependent electrical properties of a-SiC thin films grown on quartz have not been reported.…”
mentioning
confidence: 99%