Potentialities of nanostructured SnS2 for electrocatalytic water splitting: A review

Facile grinding method synthesis of SnS2@HKUST-1 and SnS2@Ni-MOF for electrocatalytic hydrogen evolution

“…39 Zhang et al 40 investigated the HER of an SnO 2 @g-C 3 N 4 @SnS 2 catalyst under 1 M KOH with a low overpotential of 386 mV, low Tafel slope of 291 mV dec −1 and an electroactive surface area of 0.25 mF cm −2 . However, SnS 2 -based catalysts present some challenges, 41 due to their high overpotential, and low Tafel slope and stability compared to existing commercial catalysts, and it is necessary to find suitable materials to composite with SnS 2 to further improve their electrocatalytic water cleavage properties.…”

Ni loaded SnS2 hexagonal nanosheets for photocatalytic hydrogen generation via water splitting

“…has been used as a potential photocatalyst. 21–45 However, the conversion efficiency of photon energy into H 2 of the studied photocatalytic materials is limited by the factors such as poor absorption ability of the visible light, fast recombination of photoexcited charge carriers, low surface catalytic reaction efficiency, poor stability, etc. Since from a few decades, researchers have proposed many different strategies or routes to overcome these restrictions, including co-catalyst loading, crystal facet engineering, construction of different surface morphology with porous structure, band gap engineering, and construction of homo or hetero-junctions (binary, ternary), etc.…”

Tuning the Band Structure of Zn-Doped SnS2 Nanosheet-Based Thin Films by Atomic Layer Deposition for Photoelectric Devices

“…17,18 The high optical trans-mittance, electrical conductivity, and band gap of SnS 2 nanosheets make it suitable for use in various photoelectric devices and electrocatalysts. 19,20 Recently, attempts have been made to improve its photometric characteristics and to add magnetic properties by doping nanosheet SnS 2 with metals, such as Fe, Mo, W, Ru, and Zn. 21−23 Changes in its band gap, electrical, and magnetic properties using substitutional doping with other metal elements in Sn ion sites have also been studied using density functional theory.…”

“…Two-dimensional (2D) materials emerged in 2004 when Andre Gaim and Konstantin Novoselov separated graphene from graphite through exfoliation . Since then, various two-dimensional materials have been discovered and examined, all of which are strongly and covalently bonded to layers on the same plane but weakly bonded by van der Waals forces with other layers. − These materials have excellent physical and chemical properties and flexibility through the two-dimensional van der Waals layered structure and strong valent bonding between atoms. , In addition to graphene, many materials share the unique properties of 2D materials, such as hexagonal boron nitride (h-BN), black phosphorus, and transition metal dichalcogenides (TMDCs). − Among these 2D materials, TMDCs, which are band gap-tunable and have good photoelectrical properties, are attracting attention and have been researched in recent years. , TMDC materials including MoS 2 , WS 2 , MoSe 2 , and WSe 2 are used in various optoelectronic devices due to high mobility and the change in band gap characteristics according to atomic-scale thickness control. − Moreover, tin disulfide (SnS 2 ), which is a post-TMDC, is attracting attention due to a layered structure similar to that of TMDCs and has excellent photoelectric characteristics. , The high optical transmittance, electrical conductivity, and band gap of SnS 2 nanosheets make it suitable for use in various photoelectric devices and electrocatalysts. , Recently, attempts have been made to improve its photometric characteristics and to add magnetic properties by doping nanosheet SnS 2 with metals, such as Fe, Mo, W, Ru, and Zn. − Changes in its band gap, electrical, and magnetic properties using substitutional doping with other metal elements in Sn ion sites have also been studied using density functional theory. , The band gap of SnS 2 can be engineered through doping; optical and electrical properties of doped nanosheet SnS 2 provide improved photodynamic activity compared with pristine SnS 2 . In particular, Zn 2+ ions have an ionic radius of 0.074 nm, which is similar to that of Sn 4+ (0.071 nm), and therefore can be easily substituted for the Sn 4+ site, and thus, Zn is an excellent doping element and is relatively feasible for the synthesis process. − However, most research into the tuning of opto-electronic properties of tin sulfide nanosheet thin films through the doping process was conducted using simulation study to calculate theoretical values or spray pyrolysis methods, creating a need for experimental results obtained through a synthesis process at atomic scales using precisely controlled methods.…”