Potentials of Group IV Photonics Interconnects for "Red-shift" Computing Applications

Krishnamoorthy, Ashok V.; Ho, Ron; O'Krafka, B.; Cunningham, J. E.; Lexau, Jon; Zheng, Xiaolin

doi:10.1109/group4.2007.4347708

Cited by 3 publications

(3 citation statements)

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“…the energy expended in producing each bit of data, or the "energy per bit", (although the term "power per bit" is also used colloquially to mean the same thing). In order to justify the introduction of optical interconnects, their power consumption cannot exceed that of the current electrical interconnects, which means that future systems needs to target less than 1 pJ/bit [16], and arguably needs to offer a substantial reduction in power/energy consumption, although this is an extremely demanding target. Some authors argue that this means that the total (on-chip) system energy needs to target ~100fJ/bit to exceed the efficiency of the equalized on-chip electrical link at the 45 nm process node [17].…”

Section: Performance Metricsmentioning

confidence: 99%

Silicon optical modulators

et al. 2010

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Optical technology is poised to revolutionise short reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such interconnect is the optical modulator. Modulators have been improved dramatically in recent years. Most notably the bandwidth has increased from the MHz to the multi GHz regime in little more than half a decade. However, the demands of optical interconnect are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics.Minimising metrics such as the energy per bit, and device footprint, whilst maximising bandwidth and modulation depth are non trivial demands. All of this must be achieved with acceptable thermal tolerance and optical spectral width, using CMOS compatible fabrication processes. Here we discuss the techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future.

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Section: Performance Metricsmentioning

confidence: 99%

Silicon optical modulators

et al. 2010

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“…The above electrical energy-per-bit numbers alone strongly suggest that if optical technologies are to take over a substantial fraction of off-chip interconnects on boards or backplanes then the total (on-chip) system energy to run the optical interconnect cannot exceed ~ 1 pJ/bit. (See also the recent discussion of "energy per useful bit" -a metric that also factors in interconnect delay -by Krishnamoorthy et al [57], which also advocates a 1 pJ target for this related metric.) Just as in electrical interconnects, there are many energy contributions other than the output device or line driver, so the energy per bit for any optical output device (modulators or light emitters) should be << 1 pJ.…”

Section: B Energies and Interconnect Densities For Interconnects To mentioning

confidence: 99%

Device Requirements for Optical Interconnects to Silicon Chips

2009

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Abstract-We examine the current performance and future demands of interconnects to and on silicon chips. We compare electrical and optical interconnects and project the requirements for optoelectronic and optical devices if optics is to solve the major problems of interconnects to future high performance silicon chips. Optics has potential benefits in interconnect density, energy and timing. The necessity of low interconnect energy imposes low limits especially on the energy of the optical output devices, with a ~ 10 fJ/bit device energy target emerging. Some optical modulators and radical laser approaches may meet this requirement. Low (e.g., a few fF or less) photodetector capacitance is important. Very compact wavelength splitters are essential for connecting the information to fibers. Dense waveguides are necessary on-chip or on boards for guided wave optical approaches, especially if very high clock rates or dense WDM are to be avoided. Free space optics potentially can handle the necessary bandwidths even without fast clocks or WDM. With such technology, however, optics may enable the continued scaling of interconnect capacity required by future chips.

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“…When considering longer haul applications the power consumption of the device becomes less and less important. On the other hand some state that in order for silicon photonics based interconnects to be attractive, the power consumed should not be larger than electrical interconnects which they are proposed to replace (~1 pj/bit) [53]. Some extend this argument stating that the energy should not exceed 100 fj/bit to surpass the efficiency of the 45 nm process node equalized on-chip electrical link [54].…”

Section: Modulator Drive Voltage/power Consumptionmentioning

confidence: 99%

Recent breakthroughs in carrier depletion based silicon optical modulators

et al. 2014

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Abstract:The majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide. In this work we overview the different types of free carrier depletion type optical modulators in silicon. A summary of some recent example devices for each configuration is then presented together with the performance that they have achieved. Finally an insight into some current research trends involving silicon based optical modulators is provided including integration, operation in the mid-infrared wavelength range and application in short and long haul data transmission links.

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Potentials of Group IV Photonics Interconnects for "Red-shift" Computing Applications

Cited by 3 publications

References 0 publications

Silicon optical modulators

Silicon optical modulators

Device Requirements for Optical Interconnects to Silicon Chips

Recent breakthroughs in carrier depletion based silicon optical modulators

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