Powder data on TlInSe2, TlInTe2, and TlGaTe2

Sastry, V. Bhaskara; Murthy, K. P. N.; Mamedov, Nazim; Prabhavathy,

doi:10.1002/pssa.2211100134

Cited by 5 publications

(2 citation statements)

References 3 publications

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“…6b) and a non-doubtful crystalline structure (Fig. 6c) with the inter-plane atomic distances identical to those in bulky samples at least to an extend given by two diffraction reflexes observed in the current TEM investigation and reported earlier 13) from X-ray studies on powdered TlInSe 2 .…”

Section: Nanorodssupporting

confidence: 85%

1D-TlInSe₂: Band Structure, Dielectric Function and Nanorods

Mamedov

Wakita

Akita

et al. 2005

Jpn. J. Appl. Phys.

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We propose a new optical serial-to-parallel converter using a phase-shifted preamble and Mach-Zehnder delay interferometers (MZDIs) with high speed and low power consumption. From bit error rate (BER) analysis at 40 Gbit/s, operation with BER < 10 À9 was obtained. We also investigated the tolerance of the frequency mismatch of the MZDIs and the bit scalability. Tolerances of 8.1 and 1.0 GHz for 1-and 8bit-delay MZDIs were obtained, respectively. We also obtained scalabilities of 27 and 15 bits for silica and InGaAsP-based material, respectively. #

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Section: Nanorodssupporting

confidence: 85%

1D-TlInSe₂: Band Structure, Dielectric Function and Nanorods

Mamedov

Wakita

Akita

et al. 2005

Jpn. J. Appl. Phys.

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show abstract

“…TlInTe 2 is a P-type semiconductor with a fibrous structure that is sometimes being referred to as being quasi-one-dimensional [13]. Numerous studies determined physical and crystallographic data, such as melting point, density, form and size of the crystal cell [14][15][16]. Other investigations analyzed properties of the electronic band structure, like electrical conductivity, energy gaps, position of the acceptor levels and carrier concentration [17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%