Powdering Lower Chromium Carbide and Nitride Phases

Yurchenko, O. S.; Bondarenko, T. N.

doi:10.1023/b:pmmc.0000035711.37690.68

Powder Metallurgy and Metal Ceramics

2004

DOI: 10.1023/b:pmmc.0000035711.37690.68

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Powdering Lower Chromium Carbide and Nitride Phases

O. S. Yurchenko¹,

T. N. Bondarenko

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2014

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Lateral photovoltaic effect and electron transport observed in Cr nano-film

Liu¹,

Xie²,

Wang³

2014

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Lateral photovoltaic effect (LPE) can be used in position-sensitive detectors (PSDs) and has a wide application in a variety of optical transducers and sensors. In this report, a large LPE with sensitivity of 42mV/mm is observed in metal-oxide-semiconductor (MOS) structure of Cr/SiO(2)/Si. Through measuring current-voltage characteristics, we find that electron transport property in dark plays a key role and an appropriate metal thickness is crucial for obtaining a large LPE. This result is useful for applications and may explore a way to study the electron transport mechanism in nano-films' MOS structures.

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Lateral photovoltaic effect and electron transport observed in Cr nano-film

Liu¹,

Xie²,

Wang³

2014

Opt. Express

View full text Add to dashboard Cite

show abstract

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Powdering Lower Chromium Carbide and Nitride Phases

Cited by 1 publication

References 0 publications

Lateral photovoltaic effect and electron transport observed in Cr nano-film

Lateral photovoltaic effect and electron transport observed in Cr nano-film

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