Power and Spectral Range Characteristics for Optical Power Converters

Fafard, S.; Masson, Denis P.; Werthen, J. G.; Liu, James H.; Wu, Tsu‐Yang; Hundsberger, C.; Schwarzfischer, Markus; Steinle, G.; Gaertner, C.; Piemonte, C.; Luecke, Bernd; Wittl, J.; Weigert, Martin

doi:10.3390/en14154395

Cited by 27 publications

(17 citation statements)

References 23 publications

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“…The measured optimal load (R mpp = V mpp /I mpp ) as a function of the output power obtained with various OPC designs. As indicated in the caption, results are measured for the following OPC designs: single junctions from the material systems of InGaAs/InP ("PT1-InGaAs/InP") at ~1470 nm [37], of InGaAs/GaAs ("PT1-976") at ~976 nm [37], and of GaAs ("PT1-GaAs") at ~808 nm [37,57]; from multijunctions from the InGaAs/InP material system, "PTN-InGaAs/InP", with N = 2, 3, and 10, corresponding to the number of InGaAs subcells [this study]; and from multijunctions from the GaAs material system, "PTN-GaAs", with N = 4, 6, and 12, corresponding to the number of GaAs subcells [37,41]. The area of low voltage and high current is shown in pink and is less desirable for practical applications.…”

Section: Discussionmentioning

confidence: 99%

“…The key benefits of this wavelength option include the good availability of laser diodes and the maturity of GaAs-based devices. More recently, ~980 nm has become an interesting wavelength option, because the laser diodes for that range can be strategic (reliability or cost) and due to the novel availability of multijunction OPCs to cover this option [37,38,41]. Another wavelength option is in the 1310 nm region, which also has interesting recent developments [30], and can benefit from the low fiber attenuation for that spectral region.…”

Section: Introductionmentioning

confidence: 99%

“…Another wavelength option is in the 1310 nm region, which also has interesting recent developments [30], and can benefit from the low fiber attenuation for that spectral region. Lastly, the long wavelength options of 1450-1490 nm and of the ~1550 nm region can both benefit from the lowest fiber attenuation range and from the telecommunication infrastructure [10,16,[35][36][37]39,42,44]. Much telecommunication traffic utilizes the ~1550 nm region; the ~1470 nm option can help minimize the potential for interference between optical wireless power transmission and data transmission applications.…”

Section: Introductionmentioning

confidence: 99%

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High-Efficiency and High-Power Multijunction InGaAs/InP Photovoltaic Laser Power Converters for 1470 nm

Fafard

Masson

2022

Photonics

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The high-efficiency capabilities of multijunction laser power converters are demonstrated for high-power applications with an optical input of around 1470 nm. The InP-based photovoltaic power converting III-V semiconductor devices are designed here, with 10 lattice-matched subcells (PT10-InGaAs/InP), using thin InGaAs absorbing layers connected by transparent tunnel junctions. The results confirm that such long-wavelength power converter devices are capable of producing electrical output voltages greater than 4–5 V. The characteristics are compatible with common electronics requirements, and the optical input is well suited for propagation over long distances through fiber-based optical links. Conversion efficiencies of ~49% are measured at electrical outputs exceeding 7 W for an input wavelength of 1466 nm at 21 °C. The Power Converter Performance Chart has been updated with these PT10-InGaAs/InP results.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High-Efficiency and High-Power Multijunction InGaAs/InP Photovoltaic Laser Power Converters for 1470 nm

Fafard

Masson

2022

Photonics

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“…In this sense, the viability of stacking up to 30 p/n junctions has already been proven. [39,40] Another method to increase the illumination area is via the arrangement of a multisegment series connection. [41]…”

Section: Device Architecturesmentioning

confidence: 99%

Laser Power Converter Architectures Based on 3C‐SiC with Efficiencies >80%

et al. 2022

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High power laser transmission technology is based on energy transfer through a monochromatic laser onto a photovoltaic receiver avoiding the limitations of conventional wiring. Current technology, headed by GaAs‐based devices, faces two limitations: the intrinsic entropic losses and the degradation at high input power densities due to ohmic losses. Two novel laser power converters focused on overcoming these limitations are proposed. 3C‐SiC is used as base material because of its high bandgap (2.36 eV) and its excellent crystallographic properties in order to reduce the entropic losses. Also, the current decreases due to the inherent flux reduction of high energy photons. To minimize ohmic losses, a recently proposed vertical architecture is explored, which can significantly reduce series resistance around two orders of magnitude (≈10−5 Ω cm2). Furthermore, 3C‐SiC is also implemented in a conventional horizontal architecture to show the advantage of increasing the energy gap to reduce the ohmic losses. The two laser power converters obtain efficiencies above the state‐of‐the‐art (87.4% at 3000 W cm−2 for the vertical architecture and 81.1% at 100 W cm−2 for the horizontal architecture) Taking this into account, the new devices open a new route for ultrahigh efficiency remote powered systems.

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“…Laser wireless power transmission (LWPT) has the outstanding advantages of high transmission power density, high immunity to electromagnetic interference, and good mobile flexibility, which is suitable for continuous power supply for mobile devices such as unmanned aerial vehicles, airships, and robots [1][2][3][4]. Unlike PV devices, which transform sunlight into electricity, laser photovoltaics convert monochromatic light into electrical power.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Non-Uniform Irradiation on Laser Photovoltaics: Experiments and Simulations

Wang

Yang

et al. 2022

Photonics

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Laser wireless power transmission (LWPT) has various applications for mobile devices and specific equipment under extreme conditions. The light spot received by laser photovoltaics is usually non-uniform, resulting in system efficiency reduction. The output characteristics of 1 × 1 cm2 GaAs laser photovoltaics were measured under various illuminated areas. The experimental results showed that the efficiency decreased from 40.8% at the full irradiated area to 26.7% at 1/10 irradiated area. Furthermore, the drop in short-circuit current was the main factor for decreasing the efficiency. A three-dimensional (3D) finite element model was used to investigate this factor. The simulation results indicated that non-uniform irradiation could increase the total non-radiative recombination rate. The recombination rate of the absorption region increased from 6.0 × 1020 cm−3/s to 2.5 × 1021 cm−3/s, reducing the short-circuit current.

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Power and Spectral Range Characteristics for Optical Power Converters

Cited by 27 publications

References 23 publications

High-Efficiency and High-Power Multijunction InGaAs/InP Photovoltaic Laser Power Converters for 1470 nm

High-Efficiency and High-Power Multijunction InGaAs/InP Photovoltaic Laser Power Converters for 1470 nm

Laser Power Converter Architectures Based on 3C‐SiC with Efficiencies >80%

The Effect of Non-Uniform Irradiation on Laser Photovoltaics: Experiments and Simulations

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