Power budget analysis of proposed high data rate based next generation PON 2 architecture supporting high split ratio

Khan, Abdul Rehman; Musavi, Syed Hyder Abbas; Memon, Areez Khalil; Arain, Zahid Ali; Sami, Syed Shahzaib; Ahmed, Sajid; Rehman, Faizan-ur; Sheikh, Ameer-ur-Rehman

doi:10.1007/s41870-019-00289-8

Cited by 1 publication

(1 citation statement)

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“…A passive-optical network (PON) with a bit rate of 10 Gbit/s, such as the NG-PON2, is expected to cover mobile fronthaul of 5G mobile systems [1][2][3][4][5] and be a major technical candidate for NG-PON2+ up-load link. Due to a PON's unique network architecture, the increase in loss budget not only extends transmission distance but also allows for a larger splitting ratio [6][7][8][9][10][11], which will contribute to further cost effectiveness. We previously developed high-speed and high-sensitivity avalanche photodiodes (APDs) for 25-and 50-Gbaud operation [12][13][14][15] on the basis of inverted p-down design [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Practically implementable high-sensitivity 10-Gbit/s avalanche photodiode using inverted p-down design

Nada

Chen

Katsurai

et al. 2021

IEICE Electron. Express

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We developed a practical high-sensitivity 10-Gbit/s III-V compound-based avalanche photodiode (APD), and an receiver optical subassembly (ROSA) mounting the APD for 10-Gbit/s burst-mode operation. The 10-Gbit/s APD features an inverted p-down structure with a 200-nm InAlAs avalanche layer that produces low excess noise and a low dark current simultaneously at large gain. By combining our APD with a burst-mode trans-impedance amplifier (B-TIA), the resulting APD-ROSA exhibited -32.7 dBm for 10-Gbit/s burst-mode optical signals, which allows for a loss budget exceeding 35 dB on optical access networks such as passive-optical networks.

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