Power cycling testing and FE modelling focussed on Al wire bond fatigue in high power IGBT modules

An Icepak-PSpice co-simulation method to study the impact of bond wires fatigue on the current and temperature distribution of IGBT modules under short-circuit

“…As clearly mentioned in the previous literatures [10]- [13], bond wires fatigue can lead to IGBT electrical and thermal behaviour degradations. However, all these work have not studied the consequent IGBT performance degradation, for instance current or temperature imbalanced distribution after bond wires fatigue.…”

“…In multichip IGBT modules there are typically up to 800 wedged bond wires, and half of them are bonded onto the active area, which means they are exposed to almost the full temperature swing introduced by both the silicon (Si) chip power dissipation and wire's ohmic self-heating. Therefore, bond wires fatigue, including lift-off and heel cracking, is a common failure mechanism for IGBT modules [6], [10]- [13]. Besides, bond wires fatigue could occurs together with reconstruction of chip surface aluminium (Al) metallization, which in turn unavoidably degrades the IGBT performance, for instance altering current and temperature distributions [7].…”

A Temperature Gradient-Based Potential Defects Identification Method for IGBT Module

“…Consequently, the delamination case is discussed and the solder fatigue is modelled by creating a 15 μm-thick vacuum "delamination" layer in the die-attach solder layer. Two simplified models derived from the observed results in reference [31] are investigated. The corresponding temperature gradient when I=15A is displayed in Fig.16.…”

Dynamic Modeling Method of Electro-Thermo-Mechanical Degradation in IGBT Modules

“…The motivation for this particular case is its resemblance to real world application. Under these conditions, the dominant failure mechanism observed is bond wire lift-off [6], [7].…”