Power dissipation in oxide-confined 980-nm vertical-cavity surface-emitting lasers

Abstract

We presented 980-nm oxide-confined vertical-cavity surface-emitting lasers (VCSELs) with a 16-μm oxide aperture. Optical power, voltage, and emission wavelength are measured in an ambient temperature range of 5 °C–80 °C. Measurements combined with an empirical model are used to analyse the power dissipation in the device and the physical mechanism contributing to the thermal rollover phenomenon in VCSEL. It is found that the carrier leakage induced self-heating in the active region and the Joule heating caused by the series resistance are the main sources of power dissipation. In addition, carrier leakage induced self-heating increases as the injection current increases, resulting in a rapid decrease of the internal quantum efficiency, which is a dominant contribution to the thermal rollover of the VCSEL at a larger current. Our study provides useful guidelines to design a 980-nm oxide-confined VCSEL for thermal performance enhancement.

The simulation of thermal characteristics of 980 nm vertical cavity surface emitting lasers

“…In recent years, with the epitaxial technique progress of semiconductor and the continuous improvement of the fabrication technology, the research of high-power vertical cavity surface emitting laser (VCSEL) has become the focus of attention [1][2][3][4][5][6] .…”

Wet nitrogen oxidation technology and its anisotropy influence on VCSELs

“…As we all know, the oxidation confined layer with good insulation and low refractive index can be used to achieve electrical and optical mode confinement through transverse oxidation of Al 0.98 Ga 0.02 As [4][5][6][7][8] . Moreover, the oxidation confined layer can improve the quantum efficiency to obtain lower threshold current and higher power conversion efficiency.…”

Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity surface-emitting laser by polarized electroluminescence

“…[1] Therefore it has attracted much research interest in recent decades. [1][2][3][4][5][6][7][8][9] A VCSEL device usually emits two orthogonally polarized lights along two specific crystal directions, such as [110] and [1 10] directions for (001) GaAs-based VCSELs. For an ideal rotationally symmetric VCSEL device with a high degree of in-plane isotropy, these two transverse modes are degenerate.…”