Power dissipation in the quantum Hall regime

Russell, Paul; Ouali, F. F.; Hewett, N P; Challis, L. J.

doi:10.1016/0039-6028(90)90831-r

Cited by 39 publications

(11 citation statements)

References 4 publications

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“…The existence of these ''hot spots'' was expected earlier by Wakabayashi and Kawaji. 6 The same conclusion has been derived from the experiments of Russell et al, 7 who applied local bolometry technique. These experiments, however, do not specify whether the dissipation takes place within the contacts or in the 2DEG.…”

Section: Introductionsupporting

confidence: 65%

“…Existing experiments indicate that nearly all power, P H ϭ P H I 2 , is dissipated at the corners. 5,7 Therefore, no matter how and in which mechanism the power is dissipated it must eventually work to locally heat up the lattice and electron systems in the vicinity of these corners ͑hot spots͒, both on the contact and 2DEG sides. The overall temperature rise at the hot spots, however, is estimated in Klaß et al's experiments to be as small as ⌬T ϭ10 K at Iϭ30 A (ϭ2), 5 which may be far too small to account for the observed CE.…”

Section: Discussionmentioning

confidence: 99%

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Cyclotron emission from quantized Hall devices: Injection of nonequilibrium electrons from contacts

1999

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Emissions of cyclotron radiation associated with the inter-Landau-level transition of nonequilibrium electrons are experimentally studied in quantum-Hall-effect devices. It is confirmed that both the longitudinal resistance and the contact resistance are vanishing when the cyclotron emission ͑CE͒ is being observed. For the CE, a critical source-drain voltage V SD is found to exist at V SD ϭប c /2e, where ប c is the inter-Landau-level energy spacing. Spatially resolved measurements reveal that the CE takes place at both of the current entry and exit corners ͑''hot spots''͒ of the Hall bars. A model of ideal current contacts is discussed. The CE on the source side is interpreted as being due to injection of nonequilibrium electrons from the source contact, and the CE on the drain side as due to an inter-Landau-level electron tunneling caused by a steep potential wall formed at the drain contact.

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Section: Introductionsupporting

confidence: 65%

Section: Discussionmentioning

confidence: 99%

Cyclotron emission from quantized Hall devices: Injection of nonequilibrium electrons from contacts

1999

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“…It is known that the energy relaxation time of inter-Landau-level nonequilibrium electrons is on the order of nanoseconds, 26 where the process is probably dominated by acoustical phonon emissions. 27 Thus, the large values of found in the present work, as well as its parameter-sensitive character, cannot be interpreted in straightforward terms of phonon-related relaxation process and suggest instead that it is necessary to consider the excited-electron kinetics.…”

Section: A Mechanismmentioning

confidence: 64%

Highly sensitive and tunable detection of far-infrared radiation by quantum Hall devices

Kawano

Hisanaga

Takenouchi

et al. 2001

Journal of Applied Physics

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We studied far-infrared ͑FIR͒ response due to cyclotron resonance ͑CR͒ of two-dimensional electron gas systems in GaAs/AlGaAs heterostructures by using cyclotron radiation from n-InSb devices as the illumination source. We examined the dependence of the FIR response on different experimental parameters, including the aspect ratio of Hall bars, electron mobility, bias current, illumination intensity, magnetic field, and lattice temperature. A strong photoresponse emerges only in the vicinity of integer quantum Hall effect ͑IQHE͒ regimes. Time-resolved measurements show that the recombination lifetime of excited carriers depends largely on the electron mobility, ranging from 5 s to 1 ms at 4.2 K. The temporal decay of photoresponse is nonexponential in higher-mobility samples, whereas it is exponential with a single time constant in lower-mobility samples. This, together with the relatively large time constants, suggests that the FIR response is induced through multitrapping processes, in which excited carriers in Landau levels are repeatedly captured by localized states and reexcited to delocalized states. This multitrapping process is suggested to be promoted by the CR-induced heating of the electron system. Theoretical calculation based on the electron heating model reasonably reproduces characteristic dependence of the photoresponse on the magnetic field in the vicinity of IQHE plateaus. The IQHE Hall bars serve as a high-sensitive narrow-band FIR detector, where the highest sensitivity reaches ϳ10 8 V/W. Tunability of the detector is demonstrated by varying the electron density. We discuss briefly the design of high-sensitive FIR detectors using the IQHE Hall bars.

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“…Noise power spectrum of a QHR device connected according to Fig. 3(d), at a bath temperature T = 1.4 K, a dc current I = 10 μA, and a filling factor of i = 2.5. current due to Joule heating of the QHR device (see also [1] and [19]). Significant shot noise does not occur; when parameterized as S ≈ 2eIR 2 H F with e as the electron charge and F as the dimensionless Fano factor, F is zero within an uncertainty of 2 × 10 −5 (k = 1).…”

Section: B Frequency Domainmentioning

confidence: 98%

“…Applying an external dc to the QHR device affects the spectral noise densities in three ways: First, the temperature of the QHR device increases due to Joule heating (see, e.g., [1] and [19]). Second, white shot noise could occur [6], [20] but is predicted to be absent in ideal quantum conductors with perfect nonballistic electron transmission.…”

Section: A Connection Scheme and Theoretical Expectationmentioning

confidence: 99%

Noise and Correlation Study of Quantum Hall Devices

Schurr

Ahlers

Callegaro

2013

IEEE Trans. Instrum. Meas.

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We report voltage noise measurements on the cryogenic quantum Hall resistance (QHR) and present two new findings to illustrate the potential of the two-channel instrumentation used. Without applied current, only Johnson-Nyquist noise is present, but at two separate pairs of quantum Hall terminals, it can be cross-correlated via a longitudinal resistance. With applied current, excess noise due to dissipation bursts appears, which increases dramatically with the noninteger fraction of the filling factor.

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Power dissipation in the quantum Hall regime

Cited by 39 publications

References 4 publications

Cyclotron emission from quantized Hall devices: Injection of nonequilibrium electrons from contacts

Cyclotron emission from quantized Hall devices: Injection of nonequilibrium electrons from contacts

Highly sensitive and tunable detection of far-infrared radiation by quantum Hall devices

Noise and Correlation Study of Quantum Hall Devices

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