Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability

Wu, Ernest Y.; Suñé, J.

doi:10.1016/j.microrel.2005.04.004

Cited by 138 publications

(75 citation statements)

References 82 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…where F is the cumulative failure probability, the parameter The same equations can be applied likewise using the charge to breakdown, Q BD , replacing the time to breakdown as the independent variable [15]. Q BD is thought to be more closely related to the physical mechanism of breakdown [15].…”

Section: Statistical Oxide Studymentioning

confidence: 99%

“…Area dependence is observed as a vertical shift in the Weibull plot [15]. Assuming that the failure probability of a specific oxide area is p, then the failure function of the multiple N independent areas failing is F=1- (1-p) n .…”

Section: Statistical Oxide Studymentioning

confidence: 99%

“…The first is the power law model, [7], [12]- [13], [15]- [21], and the second is the 1/E model, [3], [8], [10], [22]. Recently the Hydrogen Release Model, [16]- [17], [23]- [26], linked to the power law model, has also been reported as the physical breakdown mechanism.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Gate oxide evaluation under very fast transmission line pulse (VFTLP) CDM-type stress

Malobabic

Ellis

Salcedo

et al. 2008

2008 7th International Caribbean Conference on Devices, Circuits and Systems

View full text Add to dashboard Cite

Abstract-Gate oxide breakdown is analyzed under very fast transmission line pulsed (VFTLP) stress, using different pulserise times and -widths. The switching of oxide behavior pre-and post-breakdown occurs in tenths of a nanosecond and it shows reproducible voltage and current characteristics. The total stress and time-dependent-dielectric-breakdown (TDDB) during pulsed stress-method are evaluated using the following two procedures: 1) by adding up the total pulsed stress time, and 2) by extrapolation of the pulsed stress time to a constant voltage stress (CVS)-type measurements. It is shown that the latter method allows for a better comparison of identical oxides TDDB under various stress conditions. A methodology to characterize gate oxide breakdown using a single pulse is finally discussed. This is important to assess the gate-oxide failure condition during a charged device model (CDM)-type electrostatic discharge (ESD).

show abstract

Section: Statistical Oxide Studymentioning

confidence: 99%

Section: Statistical Oxide Studymentioning

confidence: 99%

See 1 more Smart Citation

Gate oxide evaluation under very fast transmission line pulse (VFTLP) CDM-type stress

Malobabic

Ellis

Salcedo

et al. 2008

2008 7th International Caribbean Conference on Devices, Circuits and Systems

View full text Add to dashboard Cite

show abstract

“…The great challenge of implementing MOS structures as electron emitters lies in the fabrication process, since it is extremely difficult to produce an ultrathin oxide film which is still electrically insulating and nearly defect-free over an ultralarge area, e.g., 1 cm 2 . When scaling up the oxide area, the number of statistical defects leading to electric breakdown of the oxide increases dramatically, 9 which leads to a high probability of having a significant fraction of nonfunctional devices. This underlines the necessity of having a means to characterize large area oxides if these devices are to be successfully implemented in electronic devices.…”

Section: Introductionmentioning

confidence: 99%

“…One reason is the breakdown of the oxide being of the weakest-link nature. 9 The number of weak points due to spots of thin oxide will scale with the area and, therefore, be more important the larger the oxide area is since breakdown in one of these weak spots is enough to render the whole oxide useless. Another reason is the exponential dependence of the tunneling current on the thickness.…”

Section: Introductionmentioning

confidence: 99%

Ultralarge area MOS tunnel devices for electron emission

et al. 2007

View full text Add to dashboard Cite

A comparative analysis of metal-oxide-semiconductor ͑MOS͒ capacitors by capacitance-voltage ͑C-V͒ and current-voltage ͑I-V͒ characteristics has been employed to characterize the thickness variations of the oxide on different length scales. Ultralarge area ͑1 cm 2 ͒ ultrathin ͑ϳ5 nm oxide͒ MOS capacitors have been fabricated to investigate their functionality and the variations in oxide thickness, with the use as future electron emission devices as the goal. I-V characteristics show very low leakage current and excellent agreement to the FowlerNordheim expression for the current density. Oxide thicknesses have been extracted by fitting a model based on Fermi-Dirac statistics to the C-V characteristics. By plotting I-V characteristics in a Fowler plot, a measure of the thickness of the oxide can be extracted from the tunnel current. These apparent thicknesses show a high degree of correlation to thicknesses extracted from C-V characteristics on the same MOS capacitors, but are systematically lower in value. This offset between the thicknesses obtained by C-V characteristics and I-V characteristics is explained by an inherent variation of the oxide thickness. Comparison of MOS capacitors with different oxide areas ranging from 1 cm 2 to 10 m 2 , using the slope from Fowler-Nordheim plots of the I-V characteristics as a measure of the oxide thickness, points toward two length scales of oxide thickness variations being ϳ1 cm and ϳ10 m, respectively.

show abstract