Power MEMS and microengines

Epstein, A. H.; Senturia, S.D.; Anathasuresh, G.; Ayón, Arturo A.; Breuer, Kenneth; Chen, K.-S.; Ehrich, F. F.; Gauba, G.; Ghodssi, Reza; Groshenry, C.; Jacobson, S. A.; Lang, Jeffrey H.; Mehra, C.-C.; Miranda, J. Mur; Nagle, Steven F.; Orr, D. J.; Piekos, Edward S.; Schmidt, Martin; Shirley, G.; Spearing, S. Mark; Tan, C. S.; Tzeng, Yang-Sheng; Waitz, Ian A.

doi:10.1109/sensor.1997.635209

Cited by 95 publications

(29 citation statements)

References 2 publications

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“…Technical details of silicon micro-engines can be found elsewhere [2], [5]. In order to achieve the required performance, the DRIE process must be capable of creating 200-500-m-deep trenches with an aspect ratio of 20 : 1 or higher and within a reasonable etching time.…”

Section: A Micro Engine Programmentioning

confidence: 99%

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Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE)

Chen

Ayón

Zhang

et al. 2002

J. Microelectromech. Syst.

211

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Abstract-The ability to predict and control the influence of process parameters during silicon etching is vital for the success of most MEMS devices. In the case of deep reactive ion etching (DRIE) of silicon substrates, experimental results indicate that etch performance as well as surface morphology and post-etch mechanical behavior have a strong dependence on processing parameters. In order to understand the influence of these parameters, a set of experiments was designed and performed to fully characterize the sensitivity of surface morphology and mechanical behavior of silicon samples produced with different DRIE operating conditions. The designed experiment involved a matrix of 55 silicon wafers with radiused hub flexure (RHF) specimens which were etched 10 min under varying DRIE processing conditions. Data collected by interferometry, atomic force microscopy (AFM), profilometry, and scanning electron microscopy (SEM), was used to determine the response of etching performance to operating conditions. The data collected for fracture strength was analyzed and modeled by finite element computation. The data was then fitted to response surfaces to model the dependence of response variables on dry processing conditions. The results showed that the achievable anisotropy, etching uniformity, fillet radii, and surface roughness had a strong dependence on chamber pressure, applied coil and electrode power, and reactant gases flow rate. The observed post-etching mechanical behavior for specimens with high surface roughness always indicated low fracture strength. For specimens with better surface quality, there was a wider distribution in sample strength. This suggests that there are more controlling factors influencing the mechanical behavior of specimens. Nevertheless, it showed that in order to achieve high strength, fine surface quality is a necessary requisite. The mapping of the dependence of response variables on dry processing conditions produced by this systematic approach provides additional insight into the plasma phenomena involved and supplies a practical set of tools to locate and optimize robust operating conditions.[684]Index Terms-Deep reactive ion etching (DRIE), fracture strength, MEMS, plasma etching, silicon, surface morphology.

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Section: A Micro Engine Programmentioning

confidence: 99%

“…Some recently reported applications are already exploiting this last alternative [1], [5], [6]. Furthermore, by suppressing the time multiplexing, the equipment can be run with continuous flows of SF or C F .…”

mentioning

confidence: 99%

Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE)

Chen

Ayón

Zhang

et al. 2002

J. Microelectromech. Syst.

211

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“…26. Series of nano devices on a single wafer [Epstein 1997] Initially the wafer is covered by an oxide and by a photo resistant film, on which a so-called "mask" is transferred through optical methods, a model in black and white with the geometry to recording. The transfer is realized bombing with ultraviolet rays a glass plate to contact directed with the wafer, on which the mask is applied.…”

Section: Drie (Deep Reactive Ion Etching)mentioning

confidence: 99%

Ultra Micro Gas Turbines

Capata¹

2012

Efficiency, Performance and Robustness of Gas Turbines

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Object of the present work is the detailed study, in every its aspect, of Ultra-Micro-Gas- Turbine Generator, that is a power device with high power density. These generators, although the covered power range oscillates between 100 and 500W, is characterized by very reduced overall dimensions: this introduces complications in the design and, above all, the realization of the mechanical components who represents the greater difficulty to exceed

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“…The five-layer sample (silicon/glass/aluminum/glass/silicon) was bonded by using four times anodic bonding processes. Using the anodic bonding, the electrical valve consisting of four-layer wafer was accomplished by Huff and Epstein [3,4], In the previous investigations on anodic bonding of glass-metal layers, multi-layer of silicon, aluminum or silicon nitride was prepared by sputtering or physical vapor deposition techniques instead of study of the mechanical property of the multi-layer wafer [5][6][7][8][9]. In the present paper, the bonding of multi-layer glass-metal was made by the common anodic bonding process.…”

Section: Introductionmentioning

confidence: 99%

Residual Stress and Deformation Analysis of Anodic Bonded Multi-layer of Glass and Aluminum

Cr¹,

Xy²,

杨振宇³

et al. 2008

International Journal of Nonlinear Sciences and Numerical Simulation

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The bonding of glass wafer to aluminum foils in multi-layer assemblies was made by the common anodic bonding process. The bonding was performed at temperatures in the range 350-450 °C and with an applied voltage in the range 400-700 V under a pressure of 0.05 MPa. Residual stress and deformation in samples of two-layer (aluminum/glass) and three-layer (glass/aluminum/glass) were analyzed by nonlinear finite element simulation software MARC. The stress and strain varying with cooling time were obtained. The analyzed results show that deformation of the three-layer sample is significantly smaller than that of the two-layer sample, because of the symmetric structure of the three-layer sample. This has an important advantage in MEMS fabrication. The maximum equivalent stresses locate in the transition layer in both samples, which will become weakness in bonded sample.

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Power MEMS and microengines

Cited by 95 publications

References 2 publications

Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE)

Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE)

Ultra Micro Gas Turbines

Residual Stress and Deformation Analysis of Anodic Bonded Multi-layer of Glass and Aluminum

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