1997
DOI: 10.1023/a:1012688329281
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Cited by 14 publications
(7 citation statements)
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“…This is close to that predicted theoretically in the high temperature limit in the absence of external magnetic fields for the single phonon process: ν ph ~ T [6]. For the Raman process, one can expect, similar to the case of silicon, a much stronger temperature dependence of the relax ation rate: ν ph ~ T α , 3 Շ α Շ 5 [9,13,14].…”
Section: 84supporting
confidence: 88%
See 1 more Smart Citation
“…This is close to that predicted theoretically in the high temperature limit in the absence of external magnetic fields for the single phonon process: ν ph ~ T [6]. For the Raman process, one can expect, similar to the case of silicon, a much stronger temperature dependence of the relax ation rate: ν ph ~ T α , 3 Շ α Շ 5 [9,13,14].…”
Section: 84supporting
confidence: 88%
“…The relaxation of the muon spin is not observed. This result evidences that, unlike the case in n type silicon [9], in n type germanium the muonic atom forms in the diamagnetic state within the time Շ10 -9 s and the concentration of non equilibrium charge carriers (produced during the muon slowing down and forma tion of the muonic atom) is negligible at times ≥10 -9 s.…”
Section: Resultssupporting
confidence: 53%
“…Figure 3 gives the temperature dependence of the relaxation rate and precession-frequency shift δω/ω 0 , where ω 0 is the precession angular frequency at room temperature. The temperature dependence of the relaxation rate is well approximated by the function λ = dT −q , where d = (4.0 ± 0.7) × 10 3 µs −1 , q = 2.73 ± 0.06 and the temperature is given in K. In the present study the value of the parameter q was determined four times more precisely than in previous work [5,6]. The data given in figure 3 confirm the conclusion [6] that at T < 50 K there is a shift of the muon spin-precession frequency.…”
Section: Phosphorus-doped Siliconmentioning
confidence: 63%
“…The temperature dependence of the relaxation rate and the precession-frequency shift of negative muon spin in n-and p-type silicon at temperatures below 30 K were observed in previous µ − SR experiments [4][5][6].…”
Section: Introductionmentioning
confidence: 61%
“…At room temperature (T = 300 K) the muon spin precession frequency in the D6 sample is close to that in the reference sample: [ω(C) − ω(D6)]/ω(C) = (1.8 ± 0.4) • 10 −4 . Opposite to the theoretical prediction [7] and to the experimental results in silicon [15], a negative shift of the muon spin precession frequency was observed at temperatures below 250 K. The temperature dependence of the frequency shift can be approximated as [ω(T ) − ω(300 K)]/ω(300 K) = ∆ω/ω ∼ −1/T (dotted line in Fig. 1).…”
Section: Resultsmentioning
confidence: 52%