Practical approach to design and fabrication of antireflection coatings for semiconductor optical amplifiers

Prakasam, Ruby Kala; Fox, S.; Gopalan, B.; Kareenahalli, S.; Heim, P.J.S.; Dagenais, M.

doi:10.1109/68.491209

Cited by 3 publications

(1 citation statement)

References 5 publications

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“…In practice, single-layer anti-reflection coatings are usually made of SiO x , which makes the coating sensitive to environmental parameters. SiO x is known to change its refractive index with time due to absorption of oxygen and water vapour from the air [2]. SiO x also has its refractive index depending on the deposition rate, which adds another parameter of uncertainty to the coating [3].…”

Section: Introductionmentioning

confidence: 99%

Anin situmonitoring technique for optimizing anti-reflection coatings using a monolithic integrated photodetector

Saini¹,

Yvind²,

Larsson³

2006

Semicond. Sci. Technol.

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A very low reflectivity of the order of 10 −4 is demonstrated for dual-layer anti-reflection coatings on normal facet semiconductor lasers, by integrated in situ monitoring. The method has been tested on three and eight quantum-well InGaAsP ridge lasers that consist of a gain section and an integrated absorber section. The principle is to monitor the change in the photocurrent generated in the absorber that is proportional to the output optical intensity from the laser, which changes as the coating progresses.

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Section: Introductionmentioning

confidence: 99%

Anin situmonitoring technique for optimizing anti-reflection coatings using a monolithic integrated photodetector

Saini¹,

Yvind²,

Larsson³

2006

Semicond. Sci. Technol.

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A simple experimental technique to obtain an optimum antireflection coating in semiconductor optical amplifiers

Soto

Garca

Márquez

et al. 2000

Microw. Opt. Technol. Lett.

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An efficient control technique that allows obtaining coatings with optimal thickness, i.e., minimal residual reflectivities on the semiconductor laser amplifiers facets, is described. The technique consists of completing the antireflection coating evaporation on the laser facets when the ripple on the amplified spontaneous emission spectrum presents the possible lowest value. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 27: 223–225, 2000.

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980-nm master oscillator power amplifiers with nonabsorbing mirrors

Lammert

Ungar

Osowski

et al. 1999

IEEE Photon. Technol. Lett.

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Practical approach to design and fabrication of antireflection coatings for semiconductor optical amplifiers

Cited by 3 publications

References 5 publications

Anin situmonitoring technique for optimizing anti-reflection coatings using a monolithic integrated photodetector

Anin situmonitoring technique for optimizing anti-reflection coatings using a monolithic integrated photodetector

A simple experimental technique to obtain an optimum antireflection coating in semiconductor optical amplifiers

980-nm master oscillator power amplifiers with nonabsorbing mirrors

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