Practical dual-band terahertz imaging system

Zhou, Dongshan; Hou, Liwei; Xie, Wei; Zang, Yuanzhang; Lü, Bin; Chen, Jian; Wu, Peiheng

doi:10.1364/ao.56.003148

Cited by 12 publications

(5 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition, as the same material is imaged at different frequencies, the image sharpness would vary with different transmission rates. Hence, multiband detectors could dramatically improve the overall sensing and imaging ability by means of obtaining more informative images through fusion technology [ 11 ]. Besides, multiband detectors also have the advantages of enhanced detection probability, increased calibration capability, and reduced influences of standing waves or scattering, showing great potential for further development of THz applications [ 11 , 12 , 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

“…A room-temperature CMOS multiband THz thermal detector composed of an antenna and an NMOS sensor is proposed, but it operates at 0.546 THz, 0.688 THz, 0.78 THz, and 0.912 THz [ 26 ]. It is necessary to design room-temperature CMOS multiband THz thermal detectors that could detect sub 1 THz waves and above 1 THz waves to possess good sensitivity and high resolution [ 11 ]. Previous works have described two kinds of CMOS triple-band THz thermal detectors, which mainly concentrate on modules’ designs, including designs of receiving structures and temperature sensors, thus they lacked the concept of collaborative designs between modules, such as completing the layout of a temperature sensor according to the raised temperature distribution of receiving structures [ 27 , 28 ].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Room-Temperature CMOS Monolithic Resonant Triple-Band Terahertz Thermal Detector

Wang

Yan

et al. 2023

Micromachines

View full text Add to dashboard Cite

Multiband terahertz (THz) detectors show great application potential in imaging, spectroscopy, and sensing fields. Thermal detectors have become a promising choice because they could sense THz radiations on the whole spectrum. This paper demonstrates the operation principle, module designs with in-depth theoretical analysis, and experimental validation of a room-temperature CMOS monolithic resonant triple-band THz thermal detector. The detector, which consists of a compact triple-band octagonal ring antenna and a sensitive proportional to absolute temperature (PTAT) sensor, has virtues of room-temperature operation, low cost, easy integration, and mass production. Good experimental results are obtained at 0.91 THz, 2.58 THz, and 4.2 THz with maximum responsivities of 32.6 V/W, 43.2 V/W, and 40 V/W, respectively, as well as NEPs of 1.28 μW/Hz0.5, 2.19 μW/Hz0.5, and 2.37 μW/Hz0.5, respectively, providing great potential for multiband THz sensing and imaging systems.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Room-Temperature CMOS Monolithic Resonant Triple-Band Terahertz Thermal Detector

Wang

Yan

et al. 2023

Micromachines

View full text Add to dashboard Cite

show abstract

“…Terahertz (THz) frequencies of 100-300 GHz have received attention in various fields, such as high-data-rate communication, imaging, and radar [1][2][3][4]. THz amplifiers are one of the most important parts in the THz transceivers for these applications.…”

Section: Introductionmentioning

confidence: 99%

Graphical Approach to Optimization of Maximally Efficient-Gain-Boosted Feedback Amplifiers

Xing

Dong

2023

Electronics

View full text Add to dashboard Cite

It is challenging to design high-gain amplifiers near the maximum oscillation frequency (fmax) of the transistors. This paper presents a comprehensive graphical approach to maximize the gain of feedback amplifiers with maximally efficient gain (GME) conception at near-fmax frequency. The complex gain-plane and the reflection-coefficient-plane are utilized to provide clear insights into both the gain and stability states of the two-port device while boosting GME. An efficient flowchart to synthesize feedback amplifiers is given, which optimizes the GME of a two-port device while ensuring the stability. A 210 GHz power amplifier in 40 nm CMOS was designed and optimized based on the proposed approach. The feedback circuit of the transistor pushes it to become potentially unstable and boosts GME. The measured peak small-signal gain was 10.48 dB at 195.33 GHz. The measured saturation output power and large-signal gain at 210 GHz were 3.04 dBm and 7.08 dB, respectively. The presented method could facilitate terahertz amplifier design.

show abstract

“…Terahertz (THz) imaging has become a significant research area driven by a wide range of practical applications, such as stand-off security check, non-invasive medical imaging, illicit drug detection, chemical analysis, and relics protection [1]- [5]. Multiband THz imaging attracts much attentions since it enables a more informative and data-rich image through image fusion technology, dramatically improving the overall imaging ability and calibration capability [6], [7]. However, one main obstacle for the development of widely accessible THz multiband imaging systems is the lack of compact, uncooled, cost-effective, easy-integration, and mass-production multiband THz detectors.…”

Section: Introductionmentioning

confidence: 99%

Uncooled CMOS Integrated Triple-Band Terahertz Thermal Detector Comprising of Metamaterial Absorber and PTAT Sensor

Wang

2020

IEEE Access

View full text Add to dashboard Cite

This paper presents an uncooled monolithic resonant triple-band terahertz (THz) thermal detector using a 55 nm complementary metal oxide semiconductor (CMOS) process. The novel integration of a compact triple-band metamaterial (MM) absorber coupled with a sensitive proportional to absolute temperature (PTAT) sensor leads to a compact, uncooled, cost-effective, easy-integration, and massproduction CMOS integrated triple-band THz thermal detector. The principles of operation and physical modeling such as selective absorption of electromagnetic energy, thermal energy conversion, and electrical response are demonstrated. The triple-band MM absorber achieves high absorption magnitudes of 90.4%, 96.8%, and 98.8% at 0.91, 2.58, and 4.3 THz respectively. The optimized PTAT sensor shows a high temperature coefficient of voltage of 10.11 mV/℃. Simulated responsivities are 37.28 V/W at 0.91 THz, 49.9 V/W at 2.58 THz, and 61.11 V/W at 4.3 THz. The proposed triple-band THz thermal detector shows calculated noise equivalence powers (NEPs) of 1.07, 1.6, and 1.31 μW/Hz 0.5 at 0.91, 2.58, and 4.3 THz respectively. Relatively better experimental results are obtained at 0.91 THz and 2.58 THz due to the scarcity of THz sources. The proposed detector achieves maximum responsivities of 33.4 V/W and 47.9 V/W, while minimum NEPs of 1.49 μW/Hz 0.5 at 0.91 THz with a modulation frequency of 2 Hz, and 1.88 μW/Hz 0.5 at 2.58 THz with a modulation frequency of 0.5 Hz.

show abstract

Practical dual-band terahertz imaging system

Cited by 12 publications

References 11 publications

Room-Temperature CMOS Monolithic Resonant Triple-Band Terahertz Thermal Detector

Room-Temperature CMOS Monolithic Resonant Triple-Band Terahertz Thermal Detector

Graphical Approach to Optimization of Maximally Efficient-Gain-Boosted Feedback Amplifiers

Uncooled CMOS Integrated Triple-Band Terahertz Thermal Detector Comprising of Metamaterial Absorber and PTAT Sensor

Contact Info

Product

Resources

About