Practical implications of chip-level statistical electromigration

Schmitz, A.

doi:10.1109/irps.2012.6241867

Cited by 4 publications

(1 citation statement)

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“…There are few papers that have studied full-chip level EM statistically [23], [24], or to have evaluated the impact of EM on performance of the circuits [25]. These works provide meaningful insights of the large-scale reliability evaluation, but their approaches do not focus on getting benefits from the EM modeling of specific interconnecting structures to the full-chip level.…”

Section: Em Of Full-chip 3-d Pdns With Msvsmentioning

confidence: 99%

Electromigration Study for Multiscale Power/Ground Vias in TSV-Based 3-D ICs

Pak

Lim

Pan

2014

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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Electromigration (EM) in power distribution networks (PDNs) is a major reliability issue in 3-D ICs. While the EM issues of local vias and through-silicon-vias (TSV) have been studied separately, the interplay of TSVs and conventional local vias in 3-D ICs has not been well investigated. This co-design is necessary when the die-to-die vertical power delivery is done using both TSVs and local interconnects. In this paper, we model EM for PDNs of 3-D ICs with a focus on multiscale via (MSV) structure, i.e., TSVs and local vias used together for vertical power delivery. We study the impact of structure, material, and preexisting void conditions on the EM-related lifetime of our MSV structures. We also investigate the transient IR-voltage change of full-chip level 3-D PDNs with MSVs with our model. The experimental results demonstrate that our EM modeling can effectively capture the EM reliability of the full-chip level 3-D PDNs with MSVs, which can be hard to achieve by the traditional EM analysis based on the individual local via or the TSV. Index Terms-3-D ICs, electromigration (EM), IR voltage, multiscale-vias (MSVs), power distribution network (PDN), reliability, through-silicon-vias (TSVs).

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Section: Em Of Full-chip 3-d Pdns With Msvsmentioning

confidence: 99%