Practical technology path to sub-0.10-μm process generations via enhanced optical lithography

Maximized inherent common process latitude of 130 nm line/space features through pitch is demonstrated in this work. It is shown that the principle method for doing so is by reducing the through pitch, or proximity, bias. The effects that formulation, illumination optics and mask error have on proximity bias are studied. Formulations exhibit a wide range of bias that does not necessarily depend upon activation energy or process temperatures. Optical settings for inner and outer sigma for both annular and quadrupole illumination, likewise, have a demonstrable effect on the proximity bias. Larger, tighter annuli or poles produce larger bias, while lower settings incur a loss of resolution. Either effect limits the common latitude so a balance is struck between them. Additionally, while the effect of outer sigma is obvious in the data, the inner sigma effect is not observed until data are corrected for mask error and the mask error factor. The proximity bias ranges between approximately 10 and 80 nm, depending upon the combination of conditions. Sub-resolution assist features (scattering bars) are specifically excluded from use in this experiment.

“…7,8 Values at 0.7 NA, for this range of pitches, is approximately 1.9 to 1.2 for the dense to isolated pitch. Estimates of the purely resist bias are given by equation 2.…”

Section: Mef Adjusted Biasmentioning

confidence: 98%

Maximizing common process latitude by integrated process development for 130-nm lithography

Reilly¹,

Parker²,

Fischer³

et al. 2002

“…[1] Using scattering-bar optical proximity correction (SB-OPC), it is possible to minimize the sensitivity of lens aberrations. [2] We feel that combining the two and with 6% attenuated PSM, a robust lithography process could be possible for l3Onm generation.…”

Section: Introductionmentioning

confidence: 99%

Effects of off-axis illumination and scattering-bar optical proximity correction on the impact of lens aberration on 130-nm polygate mask: a simulation study

Nakagawa¹,

Hollerbach²,

Chen³

2000

Self Cite

A simulation study has been performed to look at improving the imaging of a l3Onm poly gate mask design. For this lithography process, we have chosen 6% attenuated PSM applied with scattering-bar optical proximity correction (SB-OPC) using 248nm exposure wavelength. We compared the process window performance of off-axis illuminations (OAT) such as QUASAR and annular to a conventional on-axis illumination. Sampled lens aberrations were introduced to the simulation model to evaluate the impact of illumination settings. Simulations show benefits of combining SB-OPC technology with OAI on the performance of 1 3Onm poly gate line features in the presence of known lens aberrations. For this simulation study, we have used our WaveMasterTM software tool to automate the SOLIDCTM simulation loops that includes multiple pre-selected line features from an actual poly gate mask design, five different lens aberration Zerneke data sets, and three illumination settings.

“…The addition of scatter bars is a good example where the quality of isolated lines through focus can be improved to be more similar to that of dense lines [1], [2]. The quality of corners and line-ends of features can be improved by adding serifs.…”

Section: Introductionmentioning

confidence: 99%

Analysis of OPC features in binary masks at 193 nm

Adam

Neureuther

2000

The effectiveness ofOPCfeatures in binaiy masks is characterized using rigorous 3D electromagnetic simulation (TEMPEST) andlinking ofthe transmittedfields to SPLATJor the aerial image calculation. Scatter bars (SB) and.OPC serfs are treated separately. At 193nm illumination wavelength the correction in the aerial image CD at bestfocus and at out-off ocus locations of l3Onm isolated lines is examined in the presence ofa single pair ofscatter bars. The LESaerjai (line-end shortening) ofthe aerial image isfound, when placing square OPCfeatures near the corners ofthe line. Data is provided on the dependence between the size and placement of the OPC scatter bars or serfs and the magnitude of the CDaerjai and LESaeriai corrections, and general rules ofthumb regarding their design process are given. The necessity ofrigorous 3D electromagnetic simulations (TEMPEST) as compared to simulations using a thin mask approximation (SPLAT)is also assessed in each case andfound to be oflimited concernfor binary masks.