Maximized inherent common process latitude of 130 nm line/space features through pitch is demonstrated in this work. It is shown that the principle method for doing so is by reducing the through pitch, or proximity, bias. The effects that formulation, illumination optics and mask error have on proximity bias are studied. Formulations exhibit a wide range of bias that does not necessarily depend upon activation energy or process temperatures. Optical settings for inner and outer sigma for both annular and quadrupole illumination, likewise, have a demonstrable effect on the proximity bias. Larger, tighter annuli or poles produce larger bias, while lower settings incur a loss of resolution. Either effect limits the common latitude so a balance is struck between them. Additionally, while the effect of outer sigma is obvious in the data, the inner sigma effect is not observed until data are corrected for mask error and the mask error factor. The proximity bias ranges between approximately 10 and 80 nm, depending upon the combination of conditions. Sub-resolution assist features (scattering bars) are specifically excluded from use in this experiment.

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The mask error enhancement factor for contact holes is experimentally determined for 180 nm features under a variety of exposure conditions. Since its magnitude depends, in part, upon the slope of the aerial image, the value is calculated as a function of binary and phase shift masks, mask bias, and conventional and quadrupole illumination. The primary purpose is to compare experimental results to a simulation study and determine which simulation trends are accurately predicted. The results show that isolated contacts have lower MEEF than dense contacts but that dense contacts do not necessarily have the largest error factor. The magnitude of MEEF and the optimal bias that minimizes it are show to be accurately predicted.