Precipitation behavior of Xe at grain boundaries in Si3N4 ceramic during implantation at elevated temperature

Xenon behavior in TiN: A coupled XAS/TEM study

“…On the other hand, investigations led in Si 3 N 4 with a similar Xe high concentration (2 Â 10 16 at cm À2 , i.e. about 8.4 at.% at the maximum of the distribution) show a Xe segregation at grain boundaries, which act as preferential paths for the Xe release [3]. Bubbles were also observed inside grains but to a lesser extent.…”

“…Xenon is the most abundant gaseous fission product and is known to form aggregates and bubbles in various materials such as Si 3 N 4 [3], silicon [4][5][6], ZrC [7,8], graphite [9], aluminum [10,11], and UO 2 [12][13][14], inducing swelling and cracks, because of its low solubility.…”

Structure-dependent optical properties of Au/Ag irradiated TiN thin films

“…As for the optical performances of TiN, many studies have been reported with the main effort to optimize the permittivity and most importantly to reduce the optical losses to less than that of noble metals in a broad spectral range [29][30][31][32][33][34][35]. Apart from the conventional methods for optimizing the performances of the material, an effective way is to change the properties by introducing a certain amount of dopants using ion implantation [36][37][38][39][40][41][42][43]. Besides the possible formation of nanoparticles, which depends on the irradiation conditions, ion implantation is accompanied by defect formation when lattice disorder is produced and consequently the optical and electrical properties are changed.…”

Correlation between damage evolution, structural and optical properties of Xe implanted CrN thin films

“…Ag and Au irradiations show changes in optical properties due to the formation of silver and gold nanoparticles and the excitation of surface plasmon resonance in the visible region of the spectra [12,13], Ar ions irradiation results in the structural changes and progressive reduction of optical band gap of CrN films [11]. In addition, implanted xenon ions are known to form aggregates and bubbles in various materials such as Si 3 N 4 [14], silicon [15], ZrC [16], graphite [17], aluminium [18], inducing swelling and cracks due to its low solubility. It was found that due to xenon's chemical inertness and relatively large atomic number the reaction process in the material can be simply described by as formation of the physical damage.…”