Precipitation of Te and Pb in PbTe Crystals

Scanlon, Wayne W.

doi:10.1103/physrev.126.509

Cited by 77 publications

(33 citation statements)

References 3 publications

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“…The determination of phase diagrams, such as the temperature-composition (or T-x) and pressure-temperature (or P-T) projections, and the estimation of reaction constants and enthalpies for the lead chalcogenides have been the subject of numerous publications [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. Because of inherent difficulties in vapour-phase equilibration and the long annealing (precipitation) times required at low temperatures, most experimental data exist only for high temperatures.…”

Section: Introductionmentioning

confidence: 99%

TheP-T-x phase diagram of PbTe and PbSe

Sealy¹,

Crocker²

1973

J Mater Sci

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Pressure-temperature-composition (P-T-x) phase diagrams have been calculated for PbTe and PbSe in the temperature range 250~ to the melting point. Various thermodynamic quantities have been estimated which are consistent with electrical parameters measured at room temperature. However, refinements in the band structure and its temperature dependence are needed before an accurate calculation of intrinsic carrier concentration at high temperatures becomes possible.

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Section: Introductionmentioning

confidence: 99%

TheP-T-x phase diagram of PbTe and PbSe

Sealy¹,

Crocker²

1973

J Mater Sci

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“…It is well known that grinding crystals into powders increases dislocation density in samples by orders of magnitude. Correspondingly, according to Scanlon [13], the concentration of outflows for Te atoms during LTA increases by orders of magnitude, hence the probabil- ity of the creation of the Te vacancies and also their structural complexes with substituting Gd impurity increases drastically. That is why LTA of powders is much more efficient for the activation of the Gd ions in the investigated materials than that applied to the crystal samples.…”

Section: Resultsmentioning

confidence: 99%

“…It is known that low-temperature annealing (LTA) initiates outflow of the Te atoms on the distocations [13]. Hence LTA should lead to an increase in the Te vacancies in the crystal volume.…”

Section: Ideas Behind the Present Experiments And Methods Usedmentioning

confidence: 99%

“…Hence LTA should lead to an increase in the Te vacancies in the crystal volume. However, high-temperature annealing (HTA) leads to the migration of the Te atoms concentrated on the dislocations to their regular positions in the vacant Te sites of the crystal [13] and hence a decrease in N(VT~). Thus, one could expect that the concentration of the impu¡ ions in the EPR-active Gd 3 § charge state can be increased by long-term LTA and decreased by HTA, assuming that the Te vacancies are really a necessary condition for the creation of Gd 3 § If the mechanism of Gd 3+ charge state creation in the investigated materials suggested in ref.…”

Section: Ideas Behind the Present Experiments And Methods Usedmentioning

confidence: 99%

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Pecularities of EPR spectra of the Gd impurity in the Sn-Rich Pb1−x Sn x Te(Gd) solid solutions

et al. 2003

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An electron paramagnetic resonance (EPR) experimental study of crystalline and powder p-Pb~_~_ySnyGdyTe samples for various matrix composition x and Gd content y has been carried out. The study reveals that grinding the crystals into powder as well as their low-temperature annealing turns Gd impurity ions from the EPR-silent Gd 2 § state to the EPR-active Gd 3 § state, whereas high -~ temperature annealing in vacuum quenches EPR signals from Gd 3 § ions. The experimental results are interpreted in terms of a model assuming that the trivalent charge state of the Gd impurity ions in lead and tin tellurides is a component part of the "substituting Gd impurity-Te vacancy" eomplex.

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“…Scanlon [8] reports studies on the heat treatment of PbTe crystals with excesses of Pb and Te. Such excesses are believed to exist as interstitial atoms which can be diffused out and precipitated at dislocations or grain boundaries by annealing.…”

Section: The Heat Treatment Processmentioning

confidence: 99%

PROPERTIES OF THICK EVAPORATED LAYERS OF PbTe

Evans

Seeley

1968

J. Phys. Colloques

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RBsumB. -La transparence optique des couches monocristallines de PbTe peut varier aprb un traitement thermique suivant l'evaporation. Les monocouches ont quelques microns d'epaisseur et le recuit fait dkroitre la densite de porteurs d'environ 10lscm-3 (type n) B 10 17 cm-3 : le materiau de la source est B 1019cm-3 (typep). Le processus semble faire intervenir la diffusion de 0 2 a un taux de reaction correspondant a une energie de 0,83 eV.Abstract. -The changes in the optical transparency of PbTe monolayers induced by post-evaporation heat treatment are described. The monolayers are typically a few microns in thickness and heat treatment reduces the carrier density from about 1018 (n-type) per cm3 to 1 0 1 7 per cm3 : the source material is 1019 (p-type) per cm3. The process seems to involve the diffusion of 0 2 at a reaction rate equivalent to an energy of 0.83 eV.

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Precipitation of Te and Pb in PbTe Crystals

Cited by 77 publications

References 3 publications

TheP-T-x phase diagram of PbTe and PbSe

TheP-T-x phase diagram of PbTe and PbSe

Pecularities of EPR spectra of the Gd impurity in the Sn-Rich Pb1−x Sn x Te(Gd) solid solutions

PROPERTIES OF THICK EVAPORATED LAYERS OF PbTe

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