2000
DOI: 10.1149/1.1394055
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Precise Chrome Etching in Downstream Chlorine Plasmas with Electron Depletion Through Negative Ion Production

Abstract: In micropatterning down to 0.1 m class devices, photolithography requires highly accurate microfabrication of chrome (Cr) reticle masks. In this paper we report the vertical chrome etching using electron beam (EB) resist masks in downstream chlorine plasmas, where the resist damage during etching can be suppressed because of the reduced electron density through negative ion production. Though the Cr etch rate in pure Cl 2 downstream plasmas was only 15 Å/min, slight oxygen addition of 1% resulted in a great in… Show more

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Cited by 25 publications
(19 citation statements)
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“…A reverse microcapillary resist pattern as a mask for etching of the Cr film was printed by a photolithography technique. The Cr film was dry-etched employing ICP (inductively coupled plasma) with Cl 2 and 30% O 2 mixture [10]. A microchannel of a 30 mm630 mm cross-section was then dry-etched by the NLD (neutral loop discharge) [11] employing a C 3 F 8 /70% CF 4 mixture and the Cr film mask [12] on the quartz plate.…”
Section: Introductionmentioning
confidence: 99%
“…A reverse microcapillary resist pattern as a mask for etching of the Cr film was printed by a photolithography technique. The Cr film was dry-etched employing ICP (inductively coupled plasma) with Cl 2 and 30% O 2 mixture [10]. A microchannel of a 30 mm630 mm cross-section was then dry-etched by the NLD (neutral loop discharge) [11] employing a C 3 F 8 /70% CF 4 mixture and the Cr film mask [12] on the quartz plate.…”
Section: Introductionmentioning
confidence: 99%
“…A Cr film masked by a resist (ZEP 7000; Nihon Zeon), delineated by electron beam (EB) lithography was etched by a Cl 2 inductively coupled plasma (ICP) [21] at 30 mTorr in the 18 cm downstream region from the antenna. The designed capillary patterns were dry-etched by employing a planar-type neutral loop discharge (NLD) [22] with a mixture of CF 4 and C 3 F 8 and a masking material of Cr with 0.1 mm thickness. The etching pressure was 2 mTorr.…”
Section: Chip Fabricationmentioning
confidence: 99%
“…6 [20]. A Cr film masked by a resist (ZEP 7000; Nihon Zeon) delineated by an electron beam (EB) lithography that was etched by Cl 2 inductively coupled plasma (ICP) at 30 mTorr in the 18 cm region downstream from the antenna, where the Cr film etch rate selectivity to the EB resist was improved [21]. Nanocapillary patterns with 0.6 mm60.6 mm cross-sections were dry-etched employing a planar type neutral loop discharge (NLD) [22] with a mixture of CF 4 and C 3 F 8 and a masking material of Cr (0.1 mm thickness).…”
Section: Fabricationmentioning
confidence: 99%