In micropatterning down to 0.1 m class devices, photolithography requires highly accurate microfabrication of chrome (Cr) reticle masks. In this paper we report the vertical chrome etching using electron beam (EB) resist masks in downstream chlorine plasmas, where the resist damage during etching can be suppressed because of the reduced electron density through negative ion production. Though the Cr etch rate in pure Cl 2 downstream plasmas was only 15 Å/min, slight oxygen addition of 1% resulted in a great increase of Cr etch rates as large as 20 times, while resist etch rates increased only twice. Though isotropic Cr etching reactions with chlorine and oxygen radicals caused undercut features, appropriate substrate biasing allows vertical patterning of 0.2 m wide lines and spaces due to sidewall protection by redeposition of by-products from etched Cr and resists.

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Poly(tetrafl uoroethylene) (PTFE)-blended poly(ether-etherketone) (PEEK)-based materials for bearings was evaluated by ring-on-disc test equipment. The role of PTFE on load carrying capacities was studied from the viewpoint of tribochemistry. The load carrying capacities of PEEK-based materials were improved by the addition of PTFE. The dispersion degree of PTFE in PEEK strongly affected the tribological properties. Time-of-fl ight secondary ion mass spectroscopy and X-ray photoelectron spectroscopy were employed to study the surface chemistry of the rubbed surface. The results indicate that the formation of boundary fi lm composed of PTFE is benefi cial to improve load carrying capacities.