Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities

Kuroda, Naotaka; Sasaoka, Chiaki; Kimura, Akitaka; Usui, Akira; Mochizuki, Yumi

doi:10.1016/s0022-0248(98)00191-2

Cited by 54 publications

(33 citation statements)

References 7 publications

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“…The TEM-WBDF images obtained using different g-vectors (<0002> and <11-20>) did not, however, show the presence of these dislocations. It has been shown using secondary ion mass spectrometry that Mg can diffuse during the growth of Mgdoped capping layers into the underlying active quantum well regions of light emitting diodes (LEDs) and laser diodes [9,10]. The presence of Mg in the active region has also recently been linked to the reduction of the electroluminescence intensity of LEDs [9], which was suggested to result from the formation of deep non-radiative recombination centers, such as Mg-nitrogen vacancy complexes [11].…”

Section: Resultsmentioning

confidence: 99%

The effect of a Mg‐doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

Graham

Dawson

Zhang

et al. 2006

Phys. Status Solidi (c)

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We have studied the effect of depositing a Mg-doped GaN cap layer on near-ultraviolet emitting In 0.05 Ga 0.95 N/Al 0.05 Ga 0.95 N multiple quantum well structures, using photoluminescence spectroscopy and transmission electron microscopy. The room temperature (T = 300 K) photoluminescence spectra revealed a reduction in the integrated photoluminescence intensity of the capped structure, which is shown by time decay measurements to be due to greater competition from non-radiative recombination processes. The structural analysis of the samples using electron microscopy has not shown any evidence of Mg-induced defects. We suggest that the non-radiative recombination path is related to the diffusion of Mg atoms into the quantum well region and the formation of Mg-nitrogen vacancy complexes. 1 Introduction Nitride based quantum well structures emitting in the near-ultraviolet wavelength range are the subject of an increasing amount of interest, due to their potential for use in white light emitting diodes [1,2]. The production of light emitting diodes requires inclusion of the active multiple quantum well region within a p-n junction, the p-type layer normally consisting of an activated Mg-doped GaN layer.In this paper, we present a comparative study of the results of photoluminescence and transmission electron microscopy measurements on In 0.05 Ga 0.95 N/Al 0.05 Ga 0.95 N multiple quantum well structures grown with and without an additional Mg-doped GaN cap layer. We have found that the growth of such a p-type layer can be detrimental to the optical properties of quantum wells emitting with roomtemperature peak wavelengths of around 385 nm. Microstructural investigations have been used to try to identify the source of this deterioration of the optical properties.

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Section: Resultsmentioning

confidence: 99%

The effect of a Mg‐doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

Graham

Dawson

Zhang

et al. 2006

Phys. Status Solidi (c)

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“…It is limited by the solubility of the magnesium acceptor. 5,6 Due to high resistivity of the p-type contact and p-type layers, high voltage and current is required to achieve population inversion. This result in significant amount of electrical power being dissipated as waste heat, reducing considerably device lifetime.…”

Section: Introductionmentioning

confidence: 99%

Examination of thermal properties and degradation of InGaN - based diode lasers by thermoreflectance spectroscopy and focused ion beam etching

et al. 2017

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In this paper, thermal properties of InGaN-based diode lasers are investigated. The thermoreflectance technique was employed to study temperature distributions on the front facet of device. Measurements were performed, allowing investigation of the contribution of two main heat sources to the total temperature rise observed on the facet of device. It has been found that the contribution from reabsorption of laser emission at the facet, is much smaller than the one caused by Joule heating (electrical power). Additionally, devices have been investigated by means of SEM and FIB to determine the degradation sources. Inspection of the devices confirmed the lack of mirror damage or deposits. The main source of degradation was found to be located in the region of ridge and caused by extended defects. Our findings confirm the hypothesis that injected current is the major driving force of degradation.

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“…Most commonly, diffusion of impurities is claimed to be responsible for nitride laser degradation [4,5]. This diffusion may obviously be enhanced by the presence of dislocations, but also by the presence of native defects like vacancies.…”

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confidence: 99%

“…This diffusion may obviously be enhanced by the presence of dislocations, but also by the presence of native defects like vacancies. Magnesium, as an acceptor impurity, and in particular its migration towards the junction, has been suggested to be responsible for the long-term degradation of nitride bipolar devices, though no firm prove of this hypothesis has been given [4,5]. It is, however, not clear whether the mechanism of such degradation would be related to the formation of deep level nonradiative centers or to other, more complex mechanisms.…”

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confidence: 99%

What is new in nitride laser diodes reliability studies

Marona¹,

Wiśniewski

Leszczyński

et al. 2009

Phys. Status Solidi (c)

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In the present paper we discuss possible degradation mechanisms of InGaN violet laser diodes, grown on bulk GaN substrates. Lifetime tests include electrical and optical parameters monitoring, temperature and microstructural studies. Our results point out at very strong, the exponential dependence of the degradation rate on the operation current of the device. The square root‐like behavior of the degradation as a function of time is also reconfirmed. Our microstructural analysis indicates also that the appearance of strain driven defects (dislocation loops formed around AlGaN/GaN interface) may have an influence on the laser diode degradation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities

Cited by 54 publications

References 7 publications

The effect of a Mg‐doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

The effect of a Mg‐doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

Examination of thermal properties and degradation of InGaN - based diode lasers by thermoreflectance spectroscopy and focused ion beam etching

What is new in nitride laser diodes reliability studies

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