2021
DOI: 10.1149/1945-7111/abdcc6
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Precision Deep Reactive Ion Etching of Monocrystalline 4H-SiCOI for Bulk Acoustic Wave Resonators with Ultra-Low Dissipation

Abstract: Integrated mechanical resonators with high quality factors (Q) made in high acoustic velocity materials are essential for a wide range of applications, including chemical sensors, timing resonators, and high-performance inertial sensors for navigation in GPS-occluded environments. While silicon is the most popular substrate for the implementation of microelectromechanical systems (MEMS) resonators, SiC exhibits an exceptionally small intrinsic phononic dissipation due to its low Akhiezer damping limit. This pa… Show more

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Cited by 10 publications
(5 citation statements)
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“…Most of the defects may happen in the mesa etching process. Here, some strategies have been proposed for suppressing nonradiative recombination to increase the EQE of μLEDs, including (i) thermal annealing to avoid sidewall defects, (ii) passivation layer deposition by either PECVD or ALD, (iii) chemical treatments to eliminate surface imperfections, and (iv) restricting the current spreading length to stay away surface defects. , …”
Section: Technological Challenges Of μLedsmentioning
confidence: 99%
“…Most of the defects may happen in the mesa etching process. Here, some strategies have been proposed for suppressing nonradiative recombination to increase the EQE of μLEDs, including (i) thermal annealing to avoid sidewall defects, (ii) passivation layer deposition by either PECVD or ALD, (iii) chemical treatments to eliminate surface imperfections, and (iv) restricting the current spreading length to stay away surface defects. , …”
Section: Technological Challenges Of μLedsmentioning
confidence: 99%
“…Dry etching is a well-established, mature technology that has been widely used in the silicone industry for more than four decades [21]. Dry etching has, as a result, become one of the central processing steps in the fabrication of many SiC nanostructures on SiC wafers [22][23][24][25]. In the present work, vertically oriented SiC nanoarrays have been successfully synthesized under controlled pressure, etching gas ratio, and etching time in a commercially available reactive ion etching system.…”
Section: Introductionmentioning
confidence: 98%
“…Electropolishing is a non-contact electrochemical process that effectively removes burrs [ 19 ], asperities [ 20 ], and other impurities from metal surfaces [ 21 ]. Unlike other microfabrication techniques such as metal-assisted chemical etching [ 22 ], laser polishing [ 23 ], and deep reactive ion etching [ 24 ], electropolishing stands out because it removes material based on current density distribution [ 25 ], while other processes are limited by their anisotropic nature. As a result, electropolished metal surfaces become level and bright and have low surface roughness, while metals with micro features develop rounded edges, thinner features, and changes in draft angles.…”
Section: Introductionmentioning
confidence: 99%