Precursor Evaluation for Cu-Supercritical Fluid Deposition Based on Adhesion Properties and Surface Morphology

Momose, Takeshi; Sugiyama, Masakazu; Shimogaki, Yukihiro

doi:10.1143/jjap.44.l1199

Cited by 37 publications

(42 citation statements)

References 149 publications

(288 reference statements)

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“…Without specifying the crystallite size, some authors [22,48] announced that a chemical/supercritical fluid chemical deposition (CFD/SFCD) process, which enables precursor concentration far above ranges in CVD, yielded 50 nm thick films, exhibiting near-bulk resistivity.…”

Section: Discussionmentioning

confidence: 99%

A comparative study of copper thin films deposited using magnetron sputtering and supercritical fluid deposition techniques

et al. 2017

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:A comparison of crystallinity, microstructure, surface morphology and electrical conductivity is proposed for the deposition of copper films, using supercritical fluid chemical deposition (SFCD) and RF magnetron sputtering techniques. Both preparation methods yield nanocrystalline Cu films (< 100 nm) but SFCD gives access to a higher crystallinity for the same AlN substrate temperature during the deposit. Based on the film characteristics, a comparison of the evolution of electrical properties is done for RF magnetron sputtered copper films and SFCD ones with H2 as reducing agent. Uniform strain values are significantly reduced when SFCD technique is used and crystallinity is highly increased leading to lower resistivity values for a same crystallite size. This study demonstrates the viability of the SFCD technique to produce high quality nanostructured copper thin films with low resistivity values.

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Section: Discussionmentioning

confidence: 99%

A comparative study of copper thin films deposited using magnetron sputtering and supercritical fluid deposition techniques

et al. 2017

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“…SFCD Cu films generally show poor adhesion [12,25]; typical Cu adhesion to SiO 2 is less than 10 mN [20]. However, on Ru, no delamination of the films occurred, even at a stylus force of 1000 mN.…”

Section: Resultsmentioning

confidence: 99%

Supercritical fluid chemical deposition of Cu in Ru and TiN-lined deep nanotrenches using a new Cu(I) amidinate precursor

Rasadujjaman

Watanabe

Sudoh³

et al. 2015

Microelectronic Engineering

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“…However, a new technology is required for the demand of next-generation devices. For the miniaturization of interconnects in the devices, investigation on improvement of the dry processes, such as CVD and PVD [19,20], and electrodeposition methods [21] have been conducted. However, there are still many problems needed to be solved before the wiring technology can be practically used in the industries.…”

Section: Damascene Process and The Problems In Nanosized Miniaturizationmentioning

confidence: 99%

Nanoscale Cu Wiring by Electrodeposition in Supercritical Carbon Dioxide Emulsified Electrolyte

Sone

2015

Electroplating of Nanostructures

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Novel electrodeposition (ED) techniques utilizing supercritical carbon dioxide (scCO 2 ) emulsions (SCE) are introduced. ScCO 2 has low surface tension and high compatibility with hydrogen. Thus, this method is applied in fine Cu wiring to allow the complete filling of Cu into nanoscale confined space. The electrochemical reactions are carried out in emulsions composed of an aqueous electrolyte, scCO 2 , and surfactants. Three aspects in fine Cu wiring will be introduced, which are the dissolution of the Cu seed layer in the SCE, the gap-filling capability of the ED-SCE, and the contamination in the plated Cu. At first, the dissolution of the Cu seed layer in the SCE was observed. In order to prevent the dissolution of the Cu seed layer, the addition of Cu particles into the SCE was found to be effective. The electrolyte containing the SCE and the Cu particles is named scCO 2 suspension (SCS). The gapfilling capability was evaluated using test element groups (TEGs) with patterns of vias with a diameter of 70 nm and an aspect ratio of 5. Many defects were observed in the vias filled using the conventional electrodeposition (CONV) method. On the other hand, defect-free fillings were obtained by the ED-SCS method. Because of the highpressure environment needed to form the scCO 2 , the reaction cells are usually batchtype high-pressure vessels. In order to improve the feasibility of the ED-SCS technique, a continuous-flow reaction system is also proposed and examined using a round-type large-area TEG with a diameter of 300 mm. Complete fillings were obtained for vias with a diameter of 60 nm and an aspect ratio of 5 on the large-area TEG. This result was in good agreement with that of the batch-type reaction system and demonstrated the successful application of the continuous-flow system with ED-SCS.

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Precursor Evaluation for Cu-Supercritical Fluid Deposition Based on Adhesion Properties and Surface Morphology

Cited by 37 publications

References 149 publications

A comparative study of copper thin films deposited using magnetron sputtering and supercritical fluid deposition techniques

A comparative study of copper thin films deposited using magnetron sputtering and supercritical fluid deposition techniques

Supercritical fluid chemical deposition of Cu in Ru and TiN-lined deep nanotrenches using a new Cu(I) amidinate precursor

Nanoscale Cu Wiring by Electrodeposition in Supercritical Carbon Dioxide Emulsified Electrolyte

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