Precursors for chemical vapor deposition of tungsten oxide and molybdenum oxide

Molybdenum(iv) dithiocarboxylates as single-source precursors for AACVD of MoS2 thin films

“…48 These coreactant pairs include MoO 3 /H 2 S, 46 MoCl 5 /H 2 S, 47 Mo(CO) 6 /H 2 S, 49 Mo (CO) 6 /Et 2 S, 50 Mo(CO) 6 /CS 2 , 51 and Na 2 MoO 4 /Et 2 S. 48 An alternative approach is to deposit materials using a single-source precursor where a single compound contains all the elements found in the film. [52][53][54][55] The first reported single source precursor was the tetrakis(t-butylthiolato) complex Mo (S t Bu) 4 , which could be used for growth of MoS 2 at low temperatures between 110 and 350 °C with minimal contamination of C from the ligands. 56 The molybdenum dithiocarbamate complex Mo(Et 2 NCS 2 ) 4 has been used as a precursor for CVD of MoS 2 at 400 °C, 57 as well as for conversion to MoS 2 by pyrolysis 58 and air-spray deposition.…”

Molybdenum(III) Amidinate: Synthesis, Characterization, and Vapor Phase Growth of Mo-Based Materials

“…Critically, what both techniques require is access to suitable molecular precursors. − Even though this need has motivated the search for and discovery of a number of Mo precursors for ALD and/or CVD, ,,− a number of which are now commercially available, − there is still a vast disparity between the amount of Mo-based materials work being done and the availability of diverse molecular starting materials. Thus, there is a continuing need to discover new molecular building blocks which can enable different vapor phase growth processes over broad temperature ranges and with a variety of co-reactants.…”

CVD Grown Tungsten Oxide for Low Temperature Hydrogen Sensing: Tuning Surface Characteristics via Materials Processing for Sensing Applications

“…[20] Particularly in the case of tungsten, the number of available metalorganic CVD (MOCVD) precursors is limited. A comprehensive overview of tungsten precursors for tungsten oxide can be found in the recent review article by Ou et al [21] Based on literature reports, one of the first CVD processes for tungsten oxide was developed by Hardee et al [22] using halide containing tungsten complexes at evaporation temperatures of 240 °C for tungsten hexachloride (WCl 6 ) or room temperature for tungsten hexaflouride (WF 6 ) which is gaseous at this temperature. Resulting layers could be contaminated with halogen impurities and the by-products can etch the substrate surface or reactor parts all of which could profoundly affect the functional properties.…”

“…A comprehensive overview of tungsten precursors for tungsten oxide can be found in the recent review article by Ou et al. [ 21 ] Based on literature reports, one of the first CVD processes for tungsten oxide was developed by Hardee et al. [ 22 ] using halide containing tungsten complexes at evaporation temperatures of 240 °C for tungsten hexachloride (WCl 6 ) or room temperature for tungsten hexaflouride (WF 6 ) which is gaseous at this temperature.…”