Predicting CMOS Inverter Response in Nuclear and Space Environments

Abstract

The radiation responses of 4007's from a specific manufacturer with different packaging (i.e., plastic or ceramic) and/or electrical characterization (i.e., high-reliability or JAN) were found to vary significantly. Maintaining bias following irradiation was determined to be important in characterizing the anneal of both Al-and Si-gate inverters.Finally, dose-enhancement effects on the threshold-voltage shift were observed for 60Co inpool irradiations where the source and sample were separated by 20 in. of water.

Temporal and Dose Kinetics of Tunnel Relaxation of Non-Equilibrium Near-Interfacial Charged Defects in Insulators

“…During irradiation, all the curves are different, while some times after the end of irradiation (~ t irr ), the curves, as functions of the total elapsed time, practically coincide. Such remarkable experimental fact has been observed by many authors [27,28,33,37].…”

“…The linear theory in a form of temporal convolution integral with the empirical forms of logarithmic response function was used for description of long-term tunnel annealing at different dose rates [27,28]. The main objective of this paper is to provide a consistent mathematical structure for description of delayed temporal kinetics of the tunnel relaxation at the different dose-rate profiles, based on an exact solution of the linear kinetic equation.…”

The Time Dependence of Interface State Production

“…The dashed and solid lines in Fig. 3 It has been suggested frequently [10,11] Equation 21 has the property that a log-log plot yields straight lines at long times. Further, this straight line has the slope -1/(n-1), where n is the reaction order.…”

Semi-numerical modelling of an n-channel irradiated MOSFET

“…Among such devices the MOSFET is perhaps the most important one that forms the basic component of VLSI circuits. The eOE ect of ionizing radiation on the performance of MOSFETs has been an active area of research over decades (Long 1967, Zaininger and Holmes Siedle 1967, Ma et al 1975, Winokur et al 1983, Benedetto and Boesch 1984, Galloway et al 1984, Stassinopoulos et al 1984, Wilson and Blue 1984, Ma and Dressendorfer 1989, Sco® eld et al 1991, Fleetwood et al 1994, Chumber et al 1996, Shanware et al 1996, Ekbote et al 1996. Ionizing radiation has a detrimental eOE ect on the characteristics of MOS devices and circuits.…”