2017
DOI: 10.1039/c6cp04997d
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Predicting point defect equilibria across oxide hetero-interfaces: model system of ZrO2/Cr2O3

Abstract: We present a multi-scale approach to predict equilibrium defect concentrations across oxide/oxide hetero-interfaces. There are three factors that need to be taken into account simultaneously for computing defect redistribution around the hetero-interfaces: the variation of local bonding environment at the interface as epitomized in defect segregation energies, the band offset at the interface, and the equilibration of the chemical potentials of species and electrons via ionic and electronic drift-diffusion flu… Show more

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Cited by 30 publications
(23 citation statements)
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“…Third, none of these studies considers the contribution to oxygen diffusion under an electric field in an intrinsically formed space-charge layer at the oxide surface. Our study shows that the major contribution to the diffusion coefficient comes from charged defects, and the space-charge effect should be taken into consideration [32].…”
Section: Resultsmentioning
confidence: 85%
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“…Third, none of these studies considers the contribution to oxygen diffusion under an electric field in an intrinsically formed space-charge layer at the oxide surface. Our study shows that the major contribution to the diffusion coefficient comes from charged defects, and the space-charge effect should be taken into consideration [32].…”
Section: Resultsmentioning
confidence: 85%
“…However, if a high concentration of extrinsic doping or a higher temperature and lower oxygen pressure regime is of interest, it will be important to include defect-defect interactions. Second, extended defects in the oxide structure can significantly change its transport properties, as we have demonstrated recently, for example, for secondary phase particles embedded in a ZrO 2 matrix [32]. The effects of surface, grain boundaries, and interfaces on oxygen diffusion are also worth exploring, and this is necessary for constructing accurate higher-level transport models as well as informing microstructure engineering for oxide materials.…”
Section: Resultsmentioning
confidence: 97%
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“…One of the earliest works that looked at the point defect formation energy near a metal/ceramic interface was carried out by Duffy et al 28 using a combination of first-principles and classical methods for Ag/MgO. More recently, there have been studies of oxygen vacancy formation energy 29 , 30 and oxygen Frenkel pair 31 formation energies at metal/oxide interfaces and oxide/oxide interfaces 32 , 33 . However, most such studies of metal/ceramic interfaces focused on the oxide side of the interface and on the electronic behavior of the contact rather than diffusion—the primary focus of the present work.…”
Section: Resultsmentioning
confidence: 99%
“…They support a high concentration of oxygen vacancies (under reducing conditions) or cation vacancies (under oxidizing conditions). Under SOFC operating conditions (high temperature, cathodic potential) the surface is assumed to be enriched in oxygen vacancies [24][25][26]51] with positive formal charge, as it has also been observed at surfaces and interfaces of binary oxides, such as doped CeO 2 [52][53][54][55][56][57] and ZrO 2 [53,58]. Accumulation and ordering of such defects have been shown to induce surface reconstructions in TiO 2 (110) [59].…”
Section: Introductionmentioning
confidence: 99%