Predicting potential of 4H-SiC power devices over 10 kV

Nawaz, Muhammad

doi:10.1109/peds.2013.6527218

Cited by 8 publications

(2 citation statements)

References 23 publications

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“…The loss data for the theoretical SiC GTO has been calculated with the formulae from [1], and its active area was scaled to the size of the 4.5 kV Si IGCT. The loss data for the SiC diode has been computed with empirical formulae given in [21], and scaled to the size of the 4.5 kV Si diode. Note, that the 3.3 kV Si IGBT does not have the same chip area as the other two examples.…”

Section: Semiconductor Lossesmentioning

confidence: 99%

MMC converter cells employing ultrahigh-voltage SiC bipolar power semiconductors

Jacobs

Johannesson

Norrga

et al. 2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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AcknowledgmentsThe authors would like to acknowledge SweGRIDS for funding this project and ABB Corporate Research Center (SECRC) for their valuable support. AbstractThis paper investigates the benefits of using high-voltage converter cells for transmission applications. These cells employ ultrahigh-voltage SiC bipolar power semiconductors, which are optimized for low conduction losses. The Modular Multilevel Converter with half-bridge cells is used as a test case. The results indicate a reduction of converter volume and complexity, while maintaining low losses and harmonic performance. Ultrahigh-voltage SiC devicesSiC devices with high blocking voltage can replace a stack of devices used in cells with series-connected Si devices. Recent advances in SiC manufacturing technologies have generated state-of-art research

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Section: Semiconductor Lossesmentioning

confidence: 99%

MMC converter cells employing ultrahigh-voltage SiC bipolar power semiconductors

Jacobs

Johannesson

Norrga

et al. 2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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“…As a result, the chip area of a SiC MOSFET is smaller when compared with a Si MOSFET device of similar voltage and current ratings. Therefore, SiC devices have reduced gate charge requirements which potentially allow them to be operated at higher frequencies [11, 12]. Resonant converters using SiC devices have already been employed, proving its high efficiency and results in very clean waveforms during zero‐voltage switching (ZVS) at frequencies of several MHz [13–16].…”

Section: Introductionmentioning

confidence: 99%

High‐frequency resonant operation of an integrated medium‐voltage SiC MOSFET power module

Jørgensen

Aunsborg

Bęczkowski

et al. 2020

IET Power Electronics

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Industrial processes which use induction and dielectric heating are still relying on resonant converters based on vacuum tubes. New emerging medium-voltage silicon carbide (SiC) semiconductor power devices have a potential to replace vacuum tubes and allow for more efficient and compact converters in the high-frequency range. High-voltage packages have been proposed in the literature that are suitable for the 10 kV SiC metal-oxide-semiconductor field-effect transistors (MOSFETS), and its fast voltage switching capabilities in hard-switched applications have been demonstrated. However, no packaging is presented which allows the high-frequency operation of a 10 kV SiC MOSFET die. This study proposes the design of a power module for MHz resonant operation of a 10 kV SiC MOSFET. At high switching frequencies, the gate losses become substantial, thus the gate driver is included inside the power module package to ensure a low inductive and high thermally conductive design as seen from the gate driver. The inductance of the proposed power module layout structure is evaluated using ANSYS Q3D Extractor. The thermal performance of the integrated gate-driver circuitry is experimentally verified. Finally, the resonant operation of a medium-voltage SiC MOSFET power module is demonstrated experimentally at 1 MHz.

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Analysis of hybrid pair Si IGBT-SiC diode for very high power applications

Nawaz

Chimento

2016

2016 11th International Conference on Advanced Semiconductor Devices &Amp; Microsystems (ASDAM)

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Predicting potential of 4H-SiC power devices over 10 kV

Cited by 8 publications

References 23 publications

MMC converter cells employing ultrahigh-voltage SiC bipolar power semiconductors

MMC converter cells employing ultrahigh-voltage SiC bipolar power semiconductors

High‐frequency resonant operation of an integrated medium‐voltage SiC MOSFET power module

Analysis of hybrid pair Si IGBT-SiC diode for very high power applications

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