Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas

Okita, Atsushi; Suda, Yoshiyuki; Ozeki, Atsushi; Sugawara, Hirotake; Sakai, Yosuke; Oda, Akinori; Nakamura, Junji

doi:10.1063/1.2150599

Cited by 57 publications

(49 citation statements)

References 30 publications

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“…In PECVD, plasma generated by electrical discharges is more effective at decomposing reactive gas than that in conventional CVD. With the assistance of plasma, reactive gas species (radicals) can be generated in high density at relatively low temperature [32][33][34][35]. Correspondingly, graphene can be prepared at low temperature in a short time.…”

Section: Resultsmentioning

confidence: 99%

“…Correspondingly, graphene can be prepared at low temperature in a short time. The process of graphene growth on the Ni film can be explained as follows: an extremely high concentration of reactive radicals is formed at lower temperature and pressure because of the assistance of plasma [34,35]. This means that the trace amount of CH 4 introduced into the PECVD chamber within a short time will produce a high concentration of carbon reactive radicals.…”

Section: Resultsmentioning

confidence: 99%

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Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition

Zhang

Cao

et al. 2012

Chin. Sci. Bull.

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Large-area single-or multilayer graphene of high quality is synthesized on Ni films by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at a relatively low temperature (650°C). In the deposition process, a trace amount of CH 4 gas (2-8 sccm (sccm denotes standard cubic centimeter per minute at STP)) is introduced into the PECVD chamber and only a short deposition time (30-60 s) is used. Single-or multilayer graphene is obtained because carbon atoms from the discharging CH 4 diffuse into the Ni film and then segregate out at its surface. The layer number of the obtained graphene increases when the deposition time or CH 4 gas flow rate is increased. This investigation shows that PECVD is a simple, low-cost, and effective technique to synthesize large-area single-or multilayer graphene, which has potential for application as electronic devices. graphene, PECVD, large-area Citation:Qi J L, Zhang L X, Cao J, et al. Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition

Zhang

Cao

et al. 2012

Chin. Sci. Bull.

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“…The latter are specific for each gas mixture under study. [15,17,18,20,21,[28][29][30]. After a sensitivity analysis, 33 species (electrons, ions, radicals and background neutrals) along with 58 electron impact reactions, 115 ion-neutral reactions, and 45 neutral-neutral reactions are taken into account in our model.…”

Section: The Plasma Chemistry For Cnt/cnf Growthmentioning

confidence: 99%

“…The effect of bias on gas temperature was also discussed in the paper. The amount of carbon in CNTs grown by a capacitvely coupled (CC) CH 4 plasma was predicted by Okita et al [28] using one-dimensional fluid simulations combined with experimental measurements. The simulation results were consistent with experiment.…”

Section: Introductionmentioning

confidence: 99%

Investigating the plasma chemistry for the synthesis of carbon nanotubes/nanofibres in an inductively coupled plasma enhanced CVD system: the effect of different gas mixtures

Mao¹,

Bogaerts²

2010

J. Phys. D: Appl. Phys.

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To cite this version:M Mao, A Bogaerts. Investigating the plasma chemistry for the synthesis of carbon nanotubes/nanofibres in an inductively coupled plasma enhanced CVD system: the effect of different gas mixtures. Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (20) Abstract. A hybrid model, called the Hybrid Plasma Equipment Model (HPEM) was used to study an inductively coupled plasma in gas mixtures of H 2 or NH 3 with CH 4 or C 2 H 2 used for the synthesis of carbon nanotubes or carbon nanofibers (CNTs/CNFs). The plasma properties are discussed for the different gas mixture at low and moderate pressure, and the growth precursors for CNTs/CNFs are analyzed. It is found that C 2 H 2 , C 2 H 4 , and C 2 H 6 are the predominant molecules in CH 4 containing plasmas beside the feedstock gas, and serve as carbon sources for CNT/CNF formation. On the other hand, long chain hydrocarbons are observed in C 2 H 2 containing plasmas. Furthermore, the background gases CH 4 and C 2 H 2 show a different decomposition rate with H 2 or NH 3 addition at moderate pressures.

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“…Several modeling efforts have been presented in literature to describe the plasma chemistry in various types of plasma reactors used for carbon nanostructure growth, including dc plasmas [73][74][75][76], capacitively coupled rf plasmas [77,78], and inductively coupled plasmas (ICPs) [79][80][81][82][83][84][85]. These are either 0D chemical-kinetics models [79][80][81][82], 1D [73][74][75][76][77][78] or 2D [83][84][85] fluid approaches.…”

Section: (B) Cnts and Related Structuresmentioning

confidence: 99%

Computer modelling of the plasma chemistry and plasma-based growth mechanisms for nanostructured materials

Bogaerts¹,

Eckert²,

Mao³

et al. 2011

J. Phys. D: Appl. Phys.

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In this review paper, an overview is given of different modeling efforts for plasmas used for the formation and growth of nanostructured materials. This includes both the plasma chemistry, providing information on the precursors for nanostructure formation, as well as the growth processes itself. We limit ourselves to carbon (and silicon) nanostructures. Examples of the plasma modeling comprise nanoparticle formation in silane and hydrocarbon plasmas, as well as the plasma chemistry giving rise to carbon nanostructure formation, such as (ultra)nanocrystalline diamond ((U)NCD) and carbon nanotubes (CNTs). The second part of the paper deals with the simulation of the (plasma-based) growth mechanisms of the same carbon nanostructures, i.e., (U)NCD and CNTs, both by mechanistic modeling and detailed atomistic simulations. IntroductionLow temperature plasmas are playing an increasingly important role for the formation and growth of nanostructures and nanostructured materials (e.g., [1][2][3][4][5][6][7]). To improve the performance of these plasma growth processes, a good insight is desired in the plasma and in the interaction with the growing nanostructures. This insight can be obtained by experimental research, but the latter is not always straightforward, in view of the small dimensions of the nanomaterials and the possible disturbance of the plasma characteristics, e.g., when introducing a probe. Therefore, computer simulations can be very useful to assist in the experimental developments.In the present paper, we will give an overview of different modeling efforts that have been presented in the literature for plasmas used for nanostructure formation. This includes two different aspects. First, a thorough understanding of the plasma behavior is needed. This comprises background gas flow and heating (i.e., fluid dynamics), gas breakdown, transport and heating of the electrons and the so-called heavy particles, as well as the plasma chemistry, i.e., creation and destruction of the various plasma species by chemical reactions. Modeling of the plasma chemistry can give indications on which species are important precursors for the growth of nanostructured materials and how the plasma operating conditions can be tuned to optimize the growth process. Therefore, in this paper we will mainly focus on the plasma chemistry modeling. Several plasma modeling approaches exist in literature, such as analytical models, zero-dimensional (0D) chemical kinetics simulations, fluid models (describing the chemical kinetics as well as fluid dynamics), solving the Boltzmann transport equation, Monte Carlo (MC) and particle-in-cell (PIC)-MC simulations, as well as hybrid methods, combining the above (e.g., MC + fluid) models. For describing the plasma chemistry, the 0D chemical kinetics approach is often applied, as it can take into account a large number of different species and reactions without too much computational effort. However, it assumes a spatially uniform plasma composition and does not consider transport of the plasm...

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Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas

Cited by 57 publications

References 30 publications

Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition

Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition

Investigating the plasma chemistry for the synthesis of carbon nanotubes/nanofibres in an inductively coupled plasma enhanced CVD system: the effect of different gas mixtures

Computer modelling of the plasma chemistry and plasma-based growth mechanisms for nanostructured materials

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