Prediction of AC performance of double-polysilicon bipolar transistors from e-test parameters: An experiment

Abstract

AC characterisation of silicon bipolar and BiCMOS processes for RF applications is necessary because of the ever increasing speed of operation of the: bipolar devices. The data acquisition and parameter extraction steps associated with AC characterisation and modelling are time consuming and tedious and cannot easily be implemented as part of standard process monitor measurements.This paper will discuss a methodology for relating the readily available E-Tes t parameter database to the PLC parameters which are more difficult to obtain. The work was done on a 0.6pm BiCMOS process which is suited to mixed mode RF chip designs.