Prediction of TiO<SUB>2</SUB> Thin Film Growth on the Glass Beads in a Rotating Plasma Chemical Vapor Deposition Reactor

Abstract

We calculated the concentration profiles of important chemical species for TiO2 thin film growth on the glass beads in the TTIP + O2 plasmas and compared the predicted growth rates of thin films with the experimental measurements. The film thickness profile depends on the concentration profile of TiO(OC3H7)3 precursors in the gas phase because TiO(OC3H7)3 is the main precursor of the thin film. The TTIP concentration decreases with time, while the TiO(OC3H7)3 concentration increases, and they reach the steady state about 2 approximately 3 sec. The growth rate of TiO2 film predicted in this study was 9.2 nm/min and is in good agreements with the experimental result of 10.5 nm/min under the same process conditions. This study suggests that a uniform TiO2 thin film on particles can be obtained by using a rotating cylindrical PCVD reactor.

Multifunctional particle coating by plasma process and its application to pollution control

“…Kim's group calculated numerically the thickness of thin lms and growth rate of TiO 2 thin lms on the glass beads by a rotating PECVD reactor. [16][17][18][19] Calculations were made for TiO 2 thin lm deposited onto particles by using titanium tetraisopropoxide (TTIP) as precursor. Fig.…”

“…The PECVD utilizes high electron energy to activate the chemical reactions at low temperature. 14,15 Kim et al [16][17][18][19][20][21][22] proposed a rotating PECVD process for uniform particle coating and demonstrated numerically and experimentally that this process can provide a higher quality thin lm on particles, as compared with other particle-coating processes. In a rotating cylindrical PECVD reactor, the bars placed at the inside wall of the cylinder li the particles to the top of cylinder wall, where they fall down to the bottom of cylinder wall (Fig.…”