Preface to special topic: Piezoresponse force microscopy and nanoscale phenomena in polar materials

Kalinin, Sergei V.; Kholkin, A. L.

doi:10.1063/1.3625609

Cited by 3 publications

(5 citation statements)

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“…The influence of the magnetic field on the piezoelectric response in B6TFMO was demonstrated by locally generating ferroelectric hysteresis loops on Type A and Type B domains (encircled in green and yellow, respectively, in Figure A‐T as shown in Figure . These loops were generated on removal of an applied DC‐bias via DART switching spectroscopy PFM (DART‐SSPFM . No PFM hysteresis loops were performed at ±0 Oe.…”

Section: Resultsmentioning

confidence: 82%

“…Single frequency lateral piezoresponse force microscopy (SPFM ~20 kHz) under a variable magnetic field (0 Oe → +2500 Oe → 0 Oe → −2500 Oe → 0 Oe) was used to explore local magnetic field induced in‐plane ferroelectric domain switching in the B6TFMO thin films of thickness 100 nm and rms roughness of 15 nm (Figures and ).…”

Section: Resultsmentioning

confidence: 89%

“…In this work, we investigated the influence of a full magnetic field step cycle on the ferroelectric domains (Figure ). Ferroelectric domain nucleation and growth and local piezoelectric hysteresis (strain loops) were visualized using PFM under in‐plane variable magnetic fields (VFM, variable field module). Aurivillius phase thin films are preferentially c ‐axis oriented with most of the grains having their crystallographic a ‐axis lying along the lateral plane of the film.…”

Section: Resultsmentioning

confidence: 99%

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Direct visualization of magnetic‐field‐induced magnetoelectric switching in multiferroic aurivillius phase thin films

et al. 2016

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Multiferroic materials displaying coupled ferroelectric and ferromagnetic order parameters could provide a means for data storage whereby bits could be written electrically and read magnetically, or vice versa. Thin films of Aurivillius phase Bi6Ti2.8Fe1.52Mn0.68O18, previously prepared by a chemical solution deposition (CSD) technique, are multiferroics demonstrating magnetoelectric coupling at room temperature. Here we demonstrate the growth of a similar composition, Bi6Ti2.99Fe1.46Mn0.55O18, via the liquid injection chemical vapor deposition technique. High resolution magnetic measurements reveal a considerably higher in-plane ferromagnetic signature than CSD grown films (MS = 24.25 emu/g (215 emu/cm 3 ), MR = 9.916 emu/g (81.5 emu/cm 3 ), HC = 170 Oe). A statistical analysis of the results from a thorough microstructural examination of the samples, allows us to conclude that the ferromagnetic signature can be attributed to the Aurivillius phase, with a confidence level of 99.95 %. In addition, we report the direct piezoresponse force i E-mail: lynette.keeney@tyndall.ieJournal of the American Ceramic Society DOI: 10.1111DOI: 10. /jace.14597 (2016 2 microscopy (PFM) visualization of ferroelectric switching while going through a full in-plane magnetic field cycle, where increased volumes (8.6 to 14 % compared with 4 to 7 % for the CSDgrown films) of the film engage in magnetoelectric coupling and demonstrate both irreversible and reversible magnetoelectric domain switching. IntroductionMultiferroic materials which exhibit more than one mutually-coupled ferroic (e.g. ferroelectric (FE) / ferromagnetic (FM) / ferroelastic) order parameter (OP) in a single phase, provide additional degrees of OP freedom that can be exploited in novel multistate memory and sensing devices.Magnetoelectricity (the generation of a change in magnetization by an applied electric field or vice versa), on the other hand, is a related phenomenon that will arise in any material that is both electrically and magnetically polarizable and possesses an appropriate magnetic symmetry, regardless of whether it is multiferroic or not. For example, the magnetoelectric Cr2O3 is an antiferromagnetic dielectric and is neither FE nor FM 1 . The unique advantage of single phase magnetoelectric multiferroics is that not only could they find application in high storage density, lowpower memory devices that can be electrically written and magnetically read, but also memory technologies with 4-state logic might be achieved by constructing devices that exploit the presence of both ferroelectric and ferromagnetic states 2 -representing a clear improvement over current 2-state logic devices. However, there are relatively few 3-8 materials demonstrating ferroelectric and ferromagnetic properties in a single-phase at room temperature. Due to conflicting electronic structure requirements for ferroelectricity (empty d orbitals) and ferromagnetism (partially filled d orbitals), the two properties tend to be mutually exclusive 9 . Examples of multiferroic material...

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Section: Resultsmentioning

confidence: 82%

Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 99%

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Direct visualization of magnetic‐field‐induced magnetoelectric switching in multiferroic aurivillius phase thin films

et al. 2016

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Section: Introductionmentioning

confidence: 99%

“…Furthermore, PFM-related research has recently been promoted and recognised by a series of international symposia and workshops and regular special issues in the Journal of Applied Physics. [45][46][47] This review is meant to complement existing reviews addressing PFM 17,[48][49][50][51][52][53][54][55][56][57][58][59][60] by providing an overview of the technique and practical guidelines for implementation, while highlighting the breadth of materials studied by PFM.…”

Section: Introductionmentioning

confidence: 99%

Applications of piezoresponse force microscopy in materials research: from inorganic ferroelectrics to biopiezoelectrics and beyond

Denning

Guyonnet

Rodriguez

2016

International Materials Reviews

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Piezoresponse force microscopy (PFM) probes the mechanical deformation of a sample in response to an electric field applied with the tip of an atomic force microscope. Originally developed more than two decades ago to study ferroelectric materials, this technique has since been used to probe electromechanical functionality in a wide range of piezoelectric materials including organic and biological systems. PFM has also been demonstrated as a useful tool to detect mechanical strain originating from electrical phenomena in nonpiezoelectric materials. Paralleling advances in analytical and numerical modelling, many technical improvements have been made in the last decade: switching spectroscopy PFM allows the polarisation switching properties of ferroelectrics to be resolved in real space with nanometric resolution, while dual ac resonance tracking and band excitation PFM have been used to improve the signal-to-noise ratio. In turn, these advances have led to increasingly large multidimensional data sets containing more complete information on the properties of the sample studied. In this review, PFM operation and calibration are described, and recent advances in the characterisation of electromechanical coupling using PFM are presented. The breadth of the systems covered highlights the versatility and wide applicability of PFM in fields as diverse as materials engineering and nanomedicine. In each of these fields, combining PFM with complementary techniques is key to develop future insight into the intrinsic properties of the materials as well as for device applications.

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Quantitative lateral and vertical piezoresponse force microscopy on a PbTiO3 single crystal

Lei

Koo

Cao

et al. 2016

Journal of Applied Physics

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Piezoresponse force microscopy (PFM) has emerged as a powerful tool for research in ferroelectric and piezoelectric materials. While the vertical PFM (VPFM) mode is well understood and applied at a quantitative level, the lateral PFM (LPFM) mode is rarely quantified, mainly due to the lack of a practical calibration methodology. Here by PFM imaging on a LiNbO3 180° domain wall, we demonstrate a convenient way to achieve simultaneous VPFM and LPFM calibrations. Using these calibrations, we perform a full quantitative VPFM and LPFM measurement on a (001)-cut PbTiO3 single crystal. The measured effective piezoelectric coefficients d33eff and d35eff together naturally provide more information on a material's local tensorial electromechanical properties. The proposed approach can be applied to a wide variety of ferroelectric and piezoelectric systems.

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Preface to special topic: Piezoresponse force microscopy and nanoscale phenomena in polar materials

Cited by 3 publications

References 53 publications

Direct visualization of magnetic‐field‐induced magnetoelectric switching in multiferroic aurivillius phase thin films

Direct visualization of magnetic‐field‐induced magnetoelectric switching in multiferroic aurivillius phase thin films

Applications of piezoresponse force microscopy in materials research: from inorganic ferroelectrics to biopiezoelectrics and beyond

Quantitative lateral and vertical piezoresponse force microscopy on a PbTiO3 single crystal

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