Preferential face deposition of gold nanoparticles on silicon nanowires by galvanic displacement

Sayed, Sayed Youssef; Wang, Feng; Malac, Marek; Wang, Dong; Buriak, Jillian M.

doi:10.1039/c2ce25254f

Cited by 25 publications

(28 citation statements)

References 44 publications

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“…The patterning of Au nanoparticles on the silicon substrate was achieved in an electroless or galvanic deposition process [17,18] followed by the high-temperature annealing. Electroless Au deposition reaction was performed for different durations (45, 90, and 120 s).…”

Section: Resultsmentioning

confidence: 99%

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Gold nanoparticle integrated with nanostructured carbon and quantum dots: synthesis and optical properties

Chopra

2015

Gold Bull

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Multilayer graphene shell encapsulated gold nanoparticle-quantum dot hybrids were derived by combining wetchemical, thermal, and covalent chemistry approaches. Uniformly patterned gold nanoparticles on a silicon substrate were obtained via gold film deposition in an electroless method followed by a thermal dewetting process. The resulting gold nanoparticles were further surface oxidized and utilized as catalysts for the chemical vapor deposition growth of multilayer graphene shell encapsulated on the gold nanoparticles (referred as "multilayer graphene shell encapsulated Au nanoparticle" or graphene nanoparticles (GNPs)). As a next step, the surface of GNPs was modified to result in carboxylic (−COOH) functionalities, which enabled carbodiimide-based covalent linking of amine-terminated CdS x Se 1-x @ZnS quantum dots (QDs) on the GNP surface. The GNPs and GNP-QD heterostructures were characterized using scanning and transmission electron microscopy for size, morphology, spatial distribution, and crystal structure evaluation. In addition, UV-vis, fluorescence spectroscopy, and discrete dipole approximation (DDA) modeling were utilized for understanding the band gap energies, fluorescence quenching, and light-matter interactions of the derived hybrids/heterostructures.

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Section: Resultsmentioning

confidence: 99%

“…Au film was deposited on the silicon substrate using acid-based wet-chemical method [17,18]. In this method, cleaned silicon substrate was treated with BOE solution to remove the surface oxide layer.…”

Section: Synthesis Of Multilayer Graphene Shell Encapsulated Au Nanopmentioning

confidence: 99%

Gold nanoparticle integrated with nanostructured carbon and quantum dots: synthesis and optical properties

Chopra

2015

Gold Bull

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“…Due to poor adhesion, gold film or particles can easily be separated from the surface of both p-and n-silicon wafers. The SEM images of gold separated from the silicon substrate are presented in Figure 3.XRD patterns of the gold deposits onto silicon substrates are presented in Figure 4.As the XRD results show, the deposit is composed exclusively of gold.The existence of SiO 2 at the surface of the silicon substrate was described and attributed as a difficulty for the galvanic displacement deposition before, [1][2][3][4] and notably, in the recent publications. 5,6 The solution used in the present work did not contain any Au(I) ion reducing agents.…”

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confidence: 99%

“…Published November 12, 2016 Using aqueous fluoride solutions, successful depositions of copper, silver or gold via the galvanic displacement reaction have been reported. [1][2][3][4] However, the fluorides represent a health hazard and as such are environmentally deleterious. Recent reports showed that silver 5 or copper 6 can be deposited from alkaline fluoride-free solutions directly onto silicon via the galvanic displacement reaction.…”

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Communication—Galvanic Deposition of Gold on Silicon from Au(I) Alkaline Fluoride-Free Solutions

Djokić

Antić

Djokic³

et al. 2016

J. Electrochem. Soc.

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Deposition of gold from alkaline fluoride-free solutions containing Au(I) ions onto silicon surfaces has been demonstrated. This deposition takes place at room temperature and does not require the presence of a reducing agent in the solution. The results clearly show that Au(I) ions can be reduced to Au(0) by silicon and, as a consequence, gold metal can be deposited at the surface of the substrate. © The Author(s) 2016. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0991614jes] All rights reserved.Manuscript submitted September 28, 2016; revised manuscript received October 31, 2016. Published November 12, 2016 Using aqueous fluoride solutions, successful depositions of copper, silver or gold via the galvanic displacement reaction have been reported. [1][2][3][4] However, the fluorides represent a health hazard and as such are environmentally deleterious. Recent reports showed that silver 5 or copper 6 can be deposited from alkaline fluoride-free solutions directly onto silicon via the galvanic displacement reaction. It was clearly shown that the native SiO 2 films can be removed from the surface of a silicon wafer upon immersion into alkaline fluoride-free solutions. In this way, the direct deposition of silver or copper without a presence of any other reducing agent in the solution is realized via the galvanic displacement reaction. Similarly, this communication describes the observations of the deposition of gold onto silicon wafer from alkaline fluoride-free aqueous solutions containing Au(I) ions. Experimentalp-(B doped) and n-(P doped) single crystal (100) silicon wafers were used as substrates in the present work. As received, silicon substrates were very carefully washed with 3:1 (H 2 SO 4 -H 2 O 2 ) solution and then with water and absolute ethanol. Immersions were performed at pH 14 using a solution containing 30 g/L Na 2 S 2 O 3 and 1 g/L Au 2 S 2 O 3 . The pH of this solution was adjusted with NaOH.The specific immersion times are reported in the Results and discussion section. Experiments were carried out at room temperature (about 23• C). After the immersion, substrates were removed from the solutions and carefully washed with water, ethanol and then pressure dried with air at room temperature. Coated silicon substrates were analyzed by X-ray diffraction (XRD) using the CuKα radiation and by scanning electron microscopy (SEM). Results and DiscussionGold was deposited on both p-and n-Si substrates after immersion into alkaline Au(I) solutions at room temperature for 2 hours. Deposition of gold was observed on both polished and back sides of the silicon wafer. A prolonged exposure of silicon wafers to the investigated solutions obviously leads to the growth of gold particles. In Figure 1 are presented SEM images of the deposited gold onto p-and n-Si s...

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“…The direct deposition of copper, silver or gold from aqueous fluoride-containing solutions onto silicon substrates via the galvanic displacement reaction can be quite successful. [3][4][5][6] According to recent investigations, silver can be successfully deposited onto silicon substrates from fluoride-free aqueous solutions. 7 Reports on the deposition of copper onto silicon substrates via the galvanic displacement reaction from fluoride-free aqueous solutions have not been found in the literature.…”

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confidence: 99%

Galvanic Processes on Silicon Surfaces in Cu(II) Alkaline Fluoride-Free Solutions

Djokić

Antić

Djokic³

et al. 2016

J. Electrochem. Soc.

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Galvanic processes on silicon surfaces in alkaline fluoride-free solutions containing Cu(II) ions were investigated in this work. Deposition of copper (I) oxide (Cu 2 O) and copper metal at pH 14 onto silicon surfaces at room or elevated temperatures has been demonstrated. This deposition does not require the presence of a reducing agent in the solution. The results clearly show that Cu(II) ions can be reduced to Cu(I) or Cu (0) Metallization of silicon with copper, silver and gold can be realized using electrochemical methods such as electrodeposition or electroless deposition from aqueous solutions. These methods are very attractive since they are simple and relatively easy to scale up. Practical difficulties arise due to the fact that at the surface of silicon wafers, oxide films of SiO 2 are present. SiO 2 films are non-conductive, and consequently, they must be removed prior to direct metallization. Although the metallization of silicon substrates can be achieved via autocatalytic deposition through surface activation with SnCl 2 /PdCl 2 catalysts, 1 this process would not remove the SiO 2 film leading to unacceptable electronic device performance. In order to remove the SiO 2 film and to deposit metals such as copper or silver from aqueous solutions directly onto silicon, pre-treatment steps are required during processing. These pre-treatment steps may involve fluoride-containing solutions, 2 which have deleterious effects on the environment. The direct deposition of copper, silver or gold from aqueous fluoride-containing solutions onto silicon substrates via the galvanic displacement reaction can be quite successful.3-6 According to recent investigations, silver can be successfully deposited onto silicon substrates from fluoride-free aqueous solutions.7 Reports on the deposition of copper onto silicon substrates via the galvanic displacement reaction from fluoride-free aqueous solutions have not been found in the literature. In an attempt to further explore the behavior of silicon in fluoride free solutions without a presence of reducing agents in the aqueous phase, the present communication describes preliminary observations on galvanic reactions on silicon substrates using Cu(II) containing alkaline fluoride-free aqueous solutions.Experimental p-(B doped) and n-(P doped) single crystal (100) silicon wafers were used as substrates in the present work. As received, silicon substrates were very carefully washed with 3:1 (H 2 SO 4 -H 2 O 2 ) solution and then with water and ethanol. After the cleaning procedure, silicon substrates were immersed into respective proprietary fluoridefree solutions containing Cu(II) ions. Immersions were performed at pH 14 using a CuC 4 H 4 O 6 (copper tartrate) complexed solution. The pH of this solution was adjusted with NaOH. The concentration of Cu(II) ions in alkaline solutions was 3.54 g/L. The immersion solutions in the present work were used as prepared. Consequently it should be assumed that O 2 was present in the solutions during the immersion.The specific immersion ...

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Preferential face deposition of gold nanoparticles on silicon nanowires by galvanic displacement

Cited by 25 publications

References 44 publications

Gold nanoparticle integrated with nanostructured carbon and quantum dots: synthesis and optical properties

Gold nanoparticle integrated with nanostructured carbon and quantum dots: synthesis and optical properties

Communication—Galvanic Deposition of Gold on Silicon from Au(I) Alkaline Fluoride-Free Solutions

Galvanic Processes on Silicon Surfaces in Cu(II) Alkaline Fluoride-Free Solutions

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