2020
DOI: 10.3390/app10238576
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Preliminary Study on the Model of Thermal Laser Stimulation for Defect Localization in Integrated Circuits

Abstract: Thermal Laser Stimulation (TLS) is an efficient technology for integrated circuit defect localization in Failure Analysis (FA) laboratories. It contains Optical Beam-Induced Resistance Change (OBIRCH), Thermally-Induced Voltage Alteration (TIVA), and Seebeck Effect Imaging (SEI). These techniques respectively use the principle of laser-induced resistance change and the Seebeck effect. In this paper, a comprehensive model of TLS technology is proposed. Firstly, the model presents an analytical expression of the… Show more

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Cited by 4 publications
(3 citation statements)
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“…Figure 2 is a scheme of the hard defect scanning and testing system [18]. It includes a laser energy control unit, an image acquisition unit, a mechanical motion unit, a data acquisition unit, a computer, etc.…”
Section: Composition and Working Principle Of The Systemmentioning
confidence: 99%
See 2 more Smart Citations
“…Figure 2 is a scheme of the hard defect scanning and testing system [18]. It includes a laser energy control unit, an image acquisition unit, a mechanical motion unit, a data acquisition unit, a computer, etc.…”
Section: Composition and Working Principle Of The Systemmentioning
confidence: 99%
“…OBIRCH and SEI signals have negative effects on each other [18]. When the bias voltage is low, the SEI signal dominates; when the bias voltage is high, the OBIRCH signal dominates.…”
Section: Eliminate the Influence Of The Seebeck Effectmentioning
confidence: 99%
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