2015
DOI: 10.1179/1432891714z.0000000001079
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Preparation and characterisation of CdxZn1−xS thin films grown in chemical bath deposition

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Cited by 3 publications
(2 citation statements)
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“…The optical band gaps of the CdxZn1-xS and CdxHg1-xSe films are localized in the ranges 2.72 eV and 1.86 eV, respectivelly. These values are close to the literary data [9][10][11][12][13].…”
Section: Resultssupporting
confidence: 88%
“…The optical band gaps of the CdxZn1-xS and CdxHg1-xSe films are localized in the ranges 2.72 eV and 1.86 eV, respectivelly. These values are close to the literary data [9][10][11][12][13].…”
Section: Resultssupporting
confidence: 88%
“…The deposition of thin and uniform (Cd x -Zn 1−x )S films as a window layer are promising and are demonstrated by layer over layer growth resulting in flower structure. As the Zn concentration in (Cd x -Zn 1−x )S films increases from 0.2 to 0.8, the morphology of films changes and in the film with x =0.2 (film with the maximum Zn concentration), the particles appear to be scarcely distributed; thus, optimizing the incorporation of greater amount of Zn to (Cd x -Zn 1−x )S films[50].…”
mentioning
confidence: 99%